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Semiconductor device and method of forming the same

A semiconductor and device technology, applied in the field of semiconductor devices and their formation, can solve problems such as poor performance of semiconductor devices, and achieve the effect of ensuring smooth formation and improving performance

Active Publication Date: 2019-01-25
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] However, existing semiconductor devices formed on ultra-thin silicon-on-insulator perform poorly

Method used

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  • Semiconductor device and method of forming the same
  • Semiconductor device and method of forming the same
  • Semiconductor device and method of forming the same

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Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0044] As mentioned in the background, existing semiconductor devices formed on ultra-thin silicon-on-insulator have poor performance. Existing methods for forming semiconductor devices on ultra-thin silicon-on-insulator such as Figure 1 to Figure 3 shown.

[0045] Please refer to figure 1 , providing a silicon-on-insulator comprising a substrate (not shown), an insulating layer (not shown) and a top silicon layer 100, and forming a gate structure (not labeled) on the top silicon layer 100, the gate structure typically It includes a gate dielectric layer (not marked) and a gate (not marked). There may also be a mask layer (not labeled) on the top of the gate structure. The sides of the gate structure and the mask layer are covered by offset spacers 120 . In the top silicon layer 100 located on both sides of the gate structure, a lightly doped ion implantation process (LDD, that is, a lightly doped drain implantation process) is usually performed after the offset spacer 12...

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Abstract

The invention discloses a semiconductor device and a forming method thereof. The forming method of the semiconductor device comprises the steps of: providing a silicon-on-insulator, which sequentially comprises a substrate, an insulating layer and a top silicon layer; forming a gate structure on the top silicon layer; forming side walls on two sides of the gate structure; forming a semiconductor layer on the top silicon layer on both sides of the side walls; implanting ions into the semiconductor layer and the top silicon layer under the semiconductor layer until a heavily-doped region is formed; removing the side walls to expose the top silicon layer under the side walls after ion implantation; performing lightly-doped ion implantation process on the exposed top silicon layer and at least a partial thickness of the semiconductor layer; and carrying out annealing process after the lightly-doped ion implantation process. The semiconductor device formed by adopting the forming method has improved performance.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor device and a forming method thereof. Background technique [0002] With the development of semiconductor technology, the integration level of integrated circuits is getting higher and higher, and the feature size (CD) of devices is getting smaller and smaller. When the feature size of the device is reduced to deep submicron (under 0.25 micron is called deep submicron), the leakage current of the device increases, the drain induction barrier lower (DIBL) effect and the short channel effect (SCE) etc. are becoming more and more obvious, and become the main problem to be overcome in reducing the size of the device. [0003] Semiconductor devices with FDSOI (Fully Depleted Silicon On Insulator, fully depleted silicon on insulator) structure (hereinafter referred to as FD devices) with undoped channels can overcome various problems caused by device size redu...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L29/06H01L21/336
Inventor 陈勇
Owner SEMICON MFG INT (SHANGHAI) CORP