A front electrode of a crystalline silicon solar cell

Abstract

A front electrode of a crystalline silicon solar cell, comprising multiple secondary grid lines (10) extending in a first direction and arranged in rows at regular intervals, said front electrode also comprising a number M of fine grid lines (20) extending in a second direction and arranged in rows at regular intervals, the fine grid lines (20) and secondary grid lines (10) being electrically connected, the width of the fine grid lines (20) being 0.10-0.25mm, and the number M = 10-20; a number N of welding contacts (30) are provided at intervals on each fine grid line (20), the welding contacts (30) being layered over the fine grid line (20) and electrically connected to said fine grid line (20), the shapes of the welding contacts (30) being two or more of square, circular and elliptical, the length of a side of a square, diameter of a circle or short axis of an ellipse being 0.2-1mm, and the length of a side of a square, diameter of a circle or short axis of an ellipse being greater than the width of a fine grid line (20); the number N = 5-15. The present positive electrode structure can achieve the dual goals of reducing light-blocking area and ensuring smooth delivery of current.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a front electrode of a crystalline silicon solar cell. Background technique [0002] A crystalline silicon solar cell is an electronic component that converts sunlight energy into electrical energy. The preparation of crystalline silicon solar cells generally goes through processes such as texturing, diffusion, coating, screen printing, and sintering. Texturing is divided into single crystal and polycrystalline texturing. Monocrystalline cells use alkali texturing to form pyramid textures on the surface of silicon wafers. Polycrystalline cells use acid etching to form pitted textures on the surface of silicon wafers. The suede surface on the silicon surface can increase the absorption of sunlight on the surface of the battery to achieve light trapping; the diffusion process is to form a P-N junction inside the silicon wafer through thermal diffusion, so that when there is li...

AI Technical Summary

Problems solved by technology

During the welding process of the ultra-fine ribbon and the sub-grid, due to the small width of the sub-grid, the abnormality of the sub-grid is too low, etc., resulting in virtual welding or inability to weld, the power of the photovoltaic module is reduced.

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