Crystalline silicon solar cell

Abstract

The invention discloses a crystalline silicon solar cell, which comprises a cell body, a front electrode and a back electrode, wherein the front electrode is located on the front surface of the cell body; the back electrode is located on the back surface of the cell body; the front electrode comprises a plurality of secondary grid lines which are arranged along the first direction at intervals; the front electrode also comprises M fine grid lines which are arranged along the second direction at intervals; the widths of the fine grid lines are 0.10-0.25mm; spaced N welding contacts are also arranged on each fine grid line; the welding contacts are arranged on each fine grid line in a laminated manner, and are squares; the range of the edge lengths of the welding contacts is 0.2-1mm; the edge lengths of the welding contacts are greater than the widths of the fine grid lines; the back electrode comprises N*M electrode units; the electrode units correspond to the welding contacts one by one; and the lengths of the electrode units in the first direction and the second direction are not smaller than the side lengths of the welding contacts in the corresponding directions separately.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a crystalline silicon solar cell. Background technique [0002] A crystalline silicon solar cell is an electronic component that converts sunlight energy into electrical energy. The preparation of crystalline silicon solar cells generally goes through processes such as texturing, diffusion, coating, screen printing, and sintering. Texturing is divided into single crystal and polycrystalline texturing. Monocrystalline cells use alkali texturing to form pyramid textures on the surface of silicon wafers. Polycrystalline cells use acid etching to form pitted textures on the surface of silicon wafers. The suede surface on the silicon surface can increase the absorption of sunlight on the surface of the battery to achieve light trapping; the diffusion process is to form a P-N junction inside the silicon wafer through thermal diffusion, so that when there is light, a voltage can be...

AI Technical Summary

Problems solved by technology

During the welding process of the ultra-fine ribbon and the sub-grid, due to the small width of the sub-grid, the abnormality of the sub-grid is too low, etc., resulting in virtual welding or inability to weld, the power of the photovoltaic module is reduced.

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