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A kind of insulated gate bipolar transistor and its manufacturing method

A bipolar transistor and manufacturing method technology, applied in transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve problems such as difficulty in accurately controlling the concentration of defects in the diffusion process, and unqualified products cannot be diffused again. The effect of improving switching performance and reducing carrier lifetime

Active Publication Date: 2018-09-21
XIAMEN YUANSHUN MICROELECTRONICS TECH +2
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The diffusion of gold and platinum in silicon has many complex behavioral characteristics, and it is difficult to precisely control the entire diffusion process and the resulting defect concentration.
In addition, because the diffusion is carried out before the electrode is made, the products with unqualified performance cannot be diffused again.

Method used

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  • A kind of insulated gate bipolar transistor and its manufacturing method
  • A kind of insulated gate bipolar transistor and its manufacturing method
  • A kind of insulated gate bipolar transistor and its manufacturing method

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Embodiment Construction

[0032] The technical scheme of the present invention will be further described below in conjunction with the accompanying drawings of the description:

[0033] Such as figure 1 As shown, an insulated gate bipolar transistor includes an N-type base region 1, a P-type base region 2, a back P+ emitter region 3, an N+ emitter region 5, a gate oxide layer 6, a polycrystalline gate 7, a collector electrode 8, emitter 9 and gate electrode 10, the collector 8 is located on the back of the back P+ emitter region 3, the N-type base region 1 is located on the front of the back P+ emitter region 3, and the emitter 9 and gate oxide layer 6 are located Above the N-type base region 1, the emitter 9 and the gate oxide layer 6 are connected to the N-type base region 1, and the polycrystalline gate 7 is located above the gate oxide layer 6 and connected to the gate oxide layer 6. The gate electrode 10 is located above the polycrystalline gate 7 and connected to the polycrystalline gate 7. The ...

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Abstract

The present invention discloses an insulated gate bipolar transistor and a manufacture method thereof. The insulated gate bipolar transistor comprises an N-type base region, a P-type base region, back P+ emitter region, an N+ emitter region, a gate oxide, a poly gate, a collector, an emitter and a gate electrode. The manufacture method thereof comprises: 1, Forming a gate oxide; 2, Forming a poly gate; 3, Forming a P-type base region; 4, Forming an N+ emitter region; 5, forming a gate electrode and a life control line; 6, forming an emitter and a gate electrode; 7, forming a back P+ emitter region; and 8, forming a collector. According to the invention, the life of the carrier of a N-type base region is reduced so that the switching performance of a device is improved.

Description

technical field [0001] The invention relates to an insulated gate bipolar transistor and a manufacturing method thereof. Background technique [0002] IGBT, the Chinese name is Insulated Gate Bipolar Transistor, which is a device composed of MOSFET input stage and PNP transistor output stage. It has the characteristics of low driving power and fast switching speed control and response of MOSFET devices, and has Bipolar devices have the characteristics of low saturation voltage and large capacity. The power stage is more durable. The frequency characteristics are between MOSFETs and power transistors, and can work normally in the frequency range of tens of kHz. [0003] The principle of lifetime control technology is to introduce recombination centers with appropriate spatial distribution into the device to effectively reduce the minority carrier lifetime and increase the switching speed of the device. Existing life control technologies for high-voltage power devices are div...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/10H01L29/739H01L21/331
CPCH01L29/1004H01L29/66333H01L29/7398
Inventor 陈利徐承福高耿辉姜帆
Owner XIAMEN YUANSHUN MICROELECTRONICS TECH
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