Circuit simulation method for fin edge roughness effect in fin type field effect transistor

Abstract

The invention discloses a circuit simulation method for a fin edge roughness effect in a fin type field effect transistor, and belongs to the field of a microelectronic device. The circuit simulation method is based on a predictable intensive model; a rough fin edge is extracted from an electron microscopy image of a fin line; the self-correlation function of the fin edge is calculated; then fin width distribution under the influence of the fin edge roughness can be obtained by a computational formula; and the fin width distribution is embedded into a simulation netlist of circuit simulation software to perform circuit simulation to obtain circuit performance parameters caused by the fin edge roughness. By adoption of the circuit simulation method, the device characteristic fluctuation influences can be accurately obtained; all the parameters can be subjected to reference regulation by a result obtained by TCAD monte carlo simulation; and compared with the conventional method, the fluctuation of a (sub-threshold slope) SS of the device, and the correlation between the fluctuation of the SS and a threshold voltage Vth can be predicted.

Description

technical field [0001] The invention belongs to the field of microelectronic devices, and relates to a circuit simulation method for fin edge roughness in a fin field effect transistor. Background technique [0002] With the gradual reduction of the scale of semiconductor devices, the influence of random fluctuations in the devices is becoming more and more difficult to ignore. The random fluctuation of the device is caused by the inevitable process uncertainty in the device manufacturing process, which will lead to the fluctuation of the electrical characteristics of the device, such as the threshold voltage, and further, it will inevitably cause the fluctuation of the circuit performance parameters. Fluctuations in circuit performance parameters will eventually lead to yield loss during chip fabrication. Therefore, circuit designers need to take into account the impact of random fluctuations in devices on circuit characteristics in advance when designing circuits, which r...

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Problems solved by technology

However, this method has many limitations

First of all, this method is not predictive at all, that is, it cannot take into account fluctuations caused by device design parameters or process changes

Secondly, this method completely regards the influence of fluctuations on the device as the influence on the threshold voltage, ignoring the influence on other parameters of the device, such as sub-threshold slope, etc., which will lead to wrong estimation of circuit fluctuations

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