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MIM capacitor structure and manufacturing method thereof

A manufacturing method and capacitor structure technology, applied in the direction of circuits, electrical components, electric solid devices, etc., can solve the problems of large leakage current and achieve the effect of increasing breakdown voltage and reducing leakage current

Inactive Publication Date: 2016-05-11
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of this application is to provide a MIM capacitor structure and its manufacturing method to solve the problem of large leakage current caused by silicon nitride as an insulating dielectric layer in the prior art

Method used

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  • MIM capacitor structure and manufacturing method thereof
  • MIM capacitor structure and manufacturing method thereof
  • MIM capacitor structure and manufacturing method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0048] First, a first aluminum metal layer is provided on the wafer; then a silicon nitride layer is provided on the first aluminum metal layer; then, N is introduced into the reactor where the silicon nitride layer is located at a flow rate of 3000 sccm 2 O gas, input the radio frequency energy of 500W into the reactor after 15s, and continue to pass N at the same flow rate 2 O gas, stop inputting radio frequency energy and stop supplying N after 60s 2 O gas, control the temperature of the reactor at 400℃, the pressure of the reactor at 5 Torr, the distance between the shower head and the heater is 300 mils, and extract the gas from the reactor to form a silicon oxide layer; then on the surface of the silicon oxide layer A second aluminum metal layer is provided to form the MIM capacitor structure of Embodiment 1.

Embodiment 2

[0050] First, a first aluminum metal layer is provided on the wafer; then a silicon nitride layer is provided on the first aluminum metal layer; then, N is introduced into the reaction furnace where the silicon nitride layer is located at a flow rate of 6000 sccm 2 O gas, input 1500W radio frequency energy into the reactor after 10s, and continue to pass N at the same flow rate 2 O gas, stop inputting radio frequency energy and stop supplying N after 180s 2 O gas, control the temperature of the reactor at 400℃, the pressure of the reactor at 4Torr, and the distance between the shower head and the heater at 600mil s In between, the gas in the reaction furnace is extracted to form a silicon oxide layer; then a second aluminum metal layer is provided on the surface of the silicon oxide layer to form the MIM capacitor structure of Embodiment 2.

Embodiment 3

[0052] First, a first aluminum metal layer is placed on the wafer; then a silicon nitride layer is placed on the first aluminum metal layer; then, N is introduced into the reactor where the silicon nitride layer is located at a flow rate of 9000 sccm 2 O gas, input 100W radio frequency energy into the reactor after 5s, and continue to pass N at the same flow rate 2 O gas, stop inputting radio frequency energy and stop supplying N after 3s 2 O gas, control the temperature of the reactor at 300℃, the pressure of the reactor at 6 Torr, and the distance between the shower head and the heater is 600 mils, and extract the gas in the reactor to form a silicon oxide layer; then the silicon oxide layer A second aluminum metal layer is provided on the surface to form the MIM capacitor structure of Embodiment 3.

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Abstract

The invention discloses an MIM capacitor structure and a manufacturing method thereof. The MIM capacitor structure comprises a first metal layer, an insulating medium layer and a second metal layer; wherein the first metal layer, the insulating medium layer and the second metal layer are arranged successively. The insulating medium layer comprises the components of a silicon nitride layer which is arranged on the first metal layer; and a silicon oxide layer which is arranged between the silicon nitride layer and the second metal layer. According to the MIM capacitor structure, the silicon oxide arranged on the surface of the silicon nitride layer neutralizes original Si<+> dangling bond on the surface of the silicon nitride layer, thereby keeping the surface of the silicon nitride layer in a neutral state, preventing electron adsorption, and performing a function of reducing leakage current through setting the silicon oxide layer when a breakdown voltage of the MIM capacitor structure is applied in voltage testing. Furthermore, because the band gap of the silicon oxide is larger than that of the silicon nitride, the silicon oxide layer can bear higher breakdown voltage, and furthermore increasing the breakdown voltage of the MIM capacitor structure.

Description

Technical field [0001] This application relates to the technical field of semiconductor manufacturing, and specifically, to a MIM capacitor structure and a manufacturing method thereof. Background technique [0002] With the development of analog ICs and RFIC chips, more and more products need to integrate Metal-Insulator-Metal (MIM) capacitors in metal interconnect lines. [0003] figure 1 Shows the cross-sectional structure of a traditional MIM capacitor, figure 1 The MIM capacitor in is a sandwich structure composed of three layers of metal, insulator and metal film. Specifically, the traditional MIM capacitor structure includes a first metal layer 100' (as the bottom plate of the MIM capacitor) and a second metal layer 300' (As the upper plate of the MIM capacitor), the third metal layer 400' and the insulating dielectric layer 200'. The upper plate of the MIM capacitor is defined by a layer of photomask, and the upper and lower two parallel plates (the first metal layer 100' ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/64H01L21/02
Inventor 方俊峰徐亮曹涯路
Owner SEMICON MFG INT (SHANGHAI) CORP