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Preparation method of large-size Cu(111) monocrystal copper foil and ultra-large-size monocrystal graphene

A single-crystal graphene, ultra-large-size technology, applied in chemical instruments and methods, single crystal growth, single crystal growth, etc., can solve problems such as reducing grain boundary density, achieve reduced production costs, good application prospects, and fewer defects Effect

Active Publication Date: 2016-05-25
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These surface treatment methods can effectively eliminate the point defect density on the copper foil surface, but cannot significantly reduce the grain boundary density

Method used

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  • Preparation method of large-size Cu(111) monocrystal copper foil and ultra-large-size monocrystal graphene
  • Preparation method of large-size Cu(111) monocrystal copper foil and ultra-large-size monocrystal graphene
  • Preparation method of large-size Cu(111) monocrystal copper foil and ultra-large-size monocrystal graphene

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Experimental program
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Effect test

Embodiment approach 1

[0018] Embodiment 1: A method for annealing doped polycrystalline copper foil to prepare single crystal Cu(111) and super-large single crystal graphene

[0019] 1. Put the polycrystalline copper foil doped with metal elements into the chemical vapor deposition equipment, pass in the inert gas, the flow rate is more than 300 sccm, and the working pressure is normal pressure (that is, one atmosphere or about 1×10 5 Pa), and then start to heat up, and the heating process lasts for 50 to 70 minutes;

[0020] 2. When the temperature rises to 800~1100℃, H 2 Gas, H 2 The flow rate is 2-500sccm, the inert gas flow rate remains unchanged, and the annealing process is carried out, and the annealing duration is 5-180min;

[0021] 3. After the annealing is over, start to introduce CH 4 Mixed gas with inert gas (CH 4 The content is 200~20000ppm), the mixed gas flow rate is 0.2~50sccm, and the H 2 The flow rate is 0.2-50 sccm, the inert gas flow rate remains unchanged, and the working ...

Embodiment approach 2

[0069] Embodiment 2: A method of annealing doped polycrystalline copper to prepare single-crystal copper foil and super-large-sized single-crystal graphene. Influence of oxygen in the heating process:

[0070]Test 1: A method of annealing doped polycrystalline copper to prepare single-crystal copper foil and super-large-size single-crystal graphene in this test is carried out according to the following steps:

[0071] 1. Put the polycrystalline copper foil doped with metal elements on the crucible substrate, put it into the chemical vapor deposition equipment, and pass Ar and H 2 Gas, Ar flow rate is 500sccm, H 2 The flow rate is 20sccm, and the working pressure is 1×10 5 Pa, then start to heat up, and the heating process lasts for 60 minutes;

[0072] 2. When the temperature rises to 1000°C, H 2 , the Ar flow rate remains constant, and the annealing process is carried out, and the annealing duration is 60min;

[0073] 3. After the annealing is over, start to introduce CH ...

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Abstract

The invention provides a preparation method of large-size Cu(111) monocrystal copper foil and ultra-large-size monocrystal graphene. The method includes the steps that polycrystal copper foil doped with metal elements serves as a raw material, ultra-large-size monocrystal Cu(111) is prepared through a special annealing technology, and then the ultra-large-size high-quality monocrystal graphene is obtained with the Cu(111) monocrystal as a substrate through a normal-pressure chemical vapor deposition method. The method solves the problem that monocrystal Cu(111) is expensive, the ultra-large-size monocrystal graphene is prepared through the regulation and control effect of the substrate, the technical problems that the monocrystal size is small during growth of graphene and the growing process is complicated are solved, and the copper foil monocrystal and high-quality and large-size monocrystal graphene samples are prepared through a very simple method.

Description

technical field [0001] The invention relates to a preparation method of large-size Cu(111) single-crystal copper foil, and also relates to a preparation method of super-large-size single-crystal graphene. Background technique [0002] In 2009, Rouff et al. first discovered that high-quality single-layer graphene can be effectively obtained by using chemical vapor deposition (CVD) with copper foil as the substrate and catalyst. This method is simple, easy to operate, and low in cost. By adjusting the experimental conditions, large-sized single-crystal graphene can be obtained, and the obtained graphene can be easily transferred to other substrates. Based on these advantages, the use of CVD to grow graphene on copper foil has attracted much attention. [0003] However, there is a big problem with graphene prepared by CVD, that is, most of the synthesized graphene is polycrystalline. The existence of grain boundaries will greatly reduce the mobility of graphene, hindering its...

Claims

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Application Information

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IPC IPC(8): C30B25/18C30B1/02C30B29/02
CPCC30B1/02C30B25/186C30B29/02
Inventor 徐小志张智宏刘开辉
Owner PEKING UNIV
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