Brushing method for reaction chamber upper cover of metal organic matter chemical vapor deposition system

Abstract

The invention discloses a brushing method for a reaction chamber upper cover of a metal organic matter chemical vapor deposition system. The brushing method comprises the steps that after growing of an epitaxial slice in a reaction chamber of the metal organic matter chemical vapor deposition system is completed, the temperature of circulating water entering the reaction chamber upper cover is reduced, the reaction chamber upper cover is made to be at the constant temperature of 20-30 DEG C, and then attachments on the reaction chamber upper cover are brushed linearly in one direction through a bristle brush. Due to the fact that the surface temperature of the reaction chamber upper cover is reduced, the temperature of the attachments attached to the reaction chamber upper cover is reduced, and the situation that the attachments tend to be in a liquid state is changed to the situation that the attachments tend to be in a solid state, so that the attachments are easy to brush away, cannot adhere to the bristle brush and also cannot block a small hole of the reaction chamber upper cover. According to the brushing method for the reaction chamber upper cover of the metal organic matter chemical vapor deposition system, by reducing the temperature of the reaction chamber upper cover, the temperature of the attachments on the reaction chamber upper cover is reduced, so that the attachments tend to be in the solid state and are easy to brush away; therefore, the attachments are prevented from being in the liquid state, being liable to be adhered to the bristle brush and blocking the small hole of the reaction chamber upper cover, meanwhile, the reaction chamber upper cover is relatively brushed cleanly, and the brushing efficiency is improved.

Description

technical field [0001] The invention relates to a method for cleaning the upper cover (SHOWERHEAD) of a reaction chamber in a metal-organic chemical vapor deposition system (AIXTRONCRIUSIIMOCVD), so as to improve its cleanliness and cleaning efficiency, and belongs to the nozzle in the metal-organic chemical vapor deposition system cleaning technology field. Background technique [0002] The main component of the CRIUSII metal organic chemical vapor deposition (MOCVD) system produced by the German metal organic chemical vapor deposition equipment manufacturer AIXTRON is the reaction chamber, and all the peripherals work for the reaction chamber. The reaction raw materials, including MO source and special gas, enter the reaction chamber cavity through the small holes on the upper cover of the reaction chamber. The standard small holes on the upper cover of the reaction chamber are as follows: figure 1 shown. Under specific pressure and temperature, a chemical reaction occur...

AI Technical Summary

Problems solved by technology

Since the small hole on the upper cover of the reaction chamber is too small (diameter 0.6mm), it is very easy to be blocked by raw materials, so MOCVD manufacturers require that after each furnace is grown, the attachment on the upper cover of the reaction chamber should be brushed off with a brush to prevent the reaction The small hole on the upper cover of the chamber is blocked. Brushing the upper cover of the reaction chamber after each furnace grows can also prevent the surface of the upper cover of the reaction chamber from attaching, which will affect the reflectivity of the epi-tt of the MOCVD built-in laser detection device, and then affect the graphite. Tray temperature detection, which affects the repeatability of epitaxial growth temperature

[0003] During the growth process of the epitaxial layer, the temperature of the reaction chamber cavity is relatively high. In order to ensure a constant temperature of the upper cover of the reaction chamber, the MOCVD system adds a water circulation device to the upper cover of the reaction chamber. The temperature of the circulating water in the cover has been kept constant at 50°C. Of course, the temperature of the reaction chamber is very high during the growth process. The temperature of the water leaving the upper cover of the reaction chamber must be higher than 50°C. After the growth of each furnace, the upper cover of the reaction chamber needs to be opened to remove the epitaxial wafers. , and then use a brush to brush the surface of the upper cover of the reaction chamber to remove the attachments on the surface of the upper cover of the reaction chamber. ℃, the attachment on the surface of the upper

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