Terahertz Spectrum Measurement Device and Measurement Method Based on Interference Effect
A measurement device and measurement method technology, applied in the field of far-infrared detection, can solve the problems of narrow spectral measurement range, low resolution, vibration sensitivity, etc., and achieve the effects of wide spectral recovery range, high resolution, and low cost
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Embodiment 1
[0066] The structural diagram of the terahertz spectrum measurement device in this embodiment is as follows image 3 shown. In this embodiment, the interference device 22 is an intrinsic semiconductor thin slice 3 whose plasma frequency is lower than the terahertz wave frequency. The intrinsic semiconductor used may be intrinsic gallium arsenide (GaAs) or intrinsic silicon (Si). In this embodiment, the interference controller 24 is a laser 6, a lens group 8 (which may also be replaced by a mirror), and a spatial light modulator. The spatial light modulator uses a digital micromirror 7 (Digital MicromirrorDevice). The laser 6 can be a titanium-doped sapphire laser. The detector 5 is a terahertz wave detector, such as a Golay Cell or a Bolometer. The terahertz wave to be measured passes through the intrinsic semiconductor 3 and the detector 5 sequentially along the transmission direction. The interference controller 24 emits a laser pattern signal to strike the surface of t...
Embodiment 2
[0099] The structure of the terahertz spectrum measurement device in this embodiment is as follows Image 6 As shown, it includes a terahertz wave collimator 2, an intrinsic semiconductor thin film 3 with a plasma frequency lower than the terahertz wave frequency, a metal thin film 17, a terahertz wave detector 5, a laser 6, and the like. In order to automatically realize the numerical acquisition and calculation in the spectrum recovery process, the present embodiment also includes a calculation processing unit 25 ( Image 6 not shown). The interference device 22 is composed of two slits 10 in the metal film 17 in this embodiment, and the two or more slits 10 on the metal film 17 can make the terahertz wave interfere at the position of the detector, and the transmission device 23 In this embodiment, it is an intrinsic semiconductor slice 3 . In this embodiment, the intrinsic semiconductor 3 used in the transmission device 23 may be intrinsic gallium arsenide (GaAs) or intri...
Embodiment 3
[0101] The structure of the terahertz spectrum measurement device in this embodiment is as follows Figure 7 As shown, it includes a terahertz wave collimation device 2, a metal sheet 17, a slit 10 on the metal sheet, a terahertz wave electro-optic crystal 28, a power supply and electrodes 29, a terahertz wave detector 5, and the like. The terahertz wave electro-optic crystal 28 in this embodiment may be zinc telluride, gallium arsenide, or lithium niobate crystals. In order to automatically realize the numerical acquisition and calculation in the spectrum recovery process, the present embodiment also includes a calculation processing unit 25 ( Figure 7 not shown). The interference device 22 is composed of two slits 10 on the metal sheet in this embodiment, the transmission device 23 is a terahertz wave electro-optic crystal 13 in this embodiment, and the interference controller 24 is composed of electrodes and a power supply 14 in this embodiment composition. The detector...
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