Terahertz Spectrum Measurement Device and Measurement Method Based on Interference Effect

A measurement device and measurement method technology, applied in the field of far-infrared detection, can solve the problems of narrow spectral measurement range, low resolution, vibration sensitivity, etc., and achieve the effects of wide spectral recovery range, high resolution, and low cost

Active Publication Date: 2018-10-19
南京华睿智光信息科技研究院有限公司
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The technical problem to be solved by the present invention is to overcome the technical problems existing in the prior art such as large volume, high cost, sensitivity to vibration, low resolution, and narrow spectral measurement range, and provide a terahertz sensor based on interference effect. Spectrum measurement device and terahertz spectrum measurement method

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Terahertz Spectrum Measurement Device and Measurement Method Based on Interference Effect
  • Terahertz Spectrum Measurement Device and Measurement Method Based on Interference Effect
  • Terahertz Spectrum Measurement Device and Measurement Method Based on Interference Effect

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0066] The structural diagram of the terahertz spectrum measurement device in this embodiment is as follows image 3 shown. In this embodiment, the interference device 22 is an intrinsic semiconductor thin slice 3 whose plasma frequency is lower than the terahertz wave frequency. The intrinsic semiconductor used may be intrinsic gallium arsenide (GaAs) or intrinsic silicon (Si). In this embodiment, the interference controller 24 is a laser 6, a lens group 8 (which may also be replaced by a mirror), and a spatial light modulator. The spatial light modulator uses a digital micromirror 7 (Digital MicromirrorDevice). The laser 6 can be a titanium-doped sapphire laser. The detector 5 is a terahertz wave detector, such as a Golay Cell or a Bolometer. The terahertz wave to be measured passes through the intrinsic semiconductor 3 and the detector 5 sequentially along the transmission direction. The interference controller 24 emits a laser pattern signal to strike the surface of t...

Embodiment 2

[0099] The structure of the terahertz spectrum measurement device in this embodiment is as follows Image 6 As shown, it includes a terahertz wave collimator 2, an intrinsic semiconductor thin film 3 with a plasma frequency lower than the terahertz wave frequency, a metal thin film 17, a terahertz wave detector 5, a laser 6, and the like. In order to automatically realize the numerical acquisition and calculation in the spectrum recovery process, the present embodiment also includes a calculation processing unit 25 ( Image 6 not shown). The interference device 22 is composed of two slits 10 in the metal film 17 in this embodiment, and the two or more slits 10 on the metal film 17 can make the terahertz wave interfere at the position of the detector, and the transmission device 23 In this embodiment, it is an intrinsic semiconductor slice 3 . In this embodiment, the intrinsic semiconductor 3 used in the transmission device 23 may be intrinsic gallium arsenide (GaAs) or intri...

Embodiment 3

[0101] The structure of the terahertz spectrum measurement device in this embodiment is as follows Figure 7 As shown, it includes a terahertz wave collimation device 2, a metal sheet 17, a slit 10 on the metal sheet, a terahertz wave electro-optic crystal 28, a power supply and electrodes 29, a terahertz wave detector 5, and the like. The terahertz wave electro-optic crystal 28 in this embodiment may be zinc telluride, gallium arsenide, or lithium niobate crystals. In order to automatically realize the numerical acquisition and calculation in the spectrum recovery process, the present embodiment also includes a calculation processing unit 25 ( Figure 7 not shown). The interference device 22 is composed of two slits 10 on the metal sheet in this embodiment, the transmission device 23 is a terahertz wave electro-optic crystal 13 in this embodiment, and the interference controller 24 is composed of electrodes and a power supply 14 in this embodiment composition. The detector...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a terahertz spectrum measuring device based on an interference effect and a measuring method thereof. The measuring device comprises an interference device, an interference controller, a detector and a calculating and processing unit. Terahertz waves to be detected form two beams or more than two beams of terahertz waves through the interference device, then the terahertz waves meet and interference happens, and the interference controller enables the detector to measure different terahertz wave interference intensities under different control conditions. The calculating and processing unit is used for receiving the measuring result of the detector and carrying out data analysis and processing. Compared with an existing terahertz time domain spectrum measuring device, the terahertz spectrum measuring device provided by the invention has the advantages that the size is relatively small, the manufacturing is easy, the cost is relatively low, the frequency resolution is high, the spectral measurement range is wide, etc.

Description

technical field [0001] The invention relates to a terahertz spectrum measurement device and a measurement method thereof, in particular to a terahertz spectrum measurement device and a spectrum measurement method based on an interference effect, and belongs to the technical field of far-infrared detection. Background technique [0002] At present, the following consensus has been reached on terahertz (THz) waves in the world, that is, terahertz waves (referring to electromagnetic waves with a frequency range of 0.05-50THz, especially 0.1-10THz) are a new type of electromagnetic wave with many unique advantages; Terahertz technology is a very important cross-frontier field, which provides a very attractive opportunity for technological innovation, national economic development and national security. The reason why it can attract people's attention and have so many applications is that the terahertz spectrum (including transmission spectrum and reflection spectrum) of matter c...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): G01J3/45
CPCG01J3/45
Inventor 杨涛黄维朱永元何浩培周馨慧仪明东
Owner 南京华睿智光信息科技研究院有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap