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Chemical field effect transistor gas-sensitive sensor and manufacturing method thereof

A field effect transistor, gas sensor technology, applied in the sensor field, can solve problems such as high manufacturing cost

Active Publication Date: 2016-06-22
重庆芯原微科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0014] The technical problem to be solved by the present invention is that the traditional MOSFET chemical field effect transistor structure is generally a floating gate structure, and there is an air gap (airgap) between the gate and the insulating layer, resulting in high manufacturing costs

Method used

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  • Chemical field effect transistor gas-sensitive sensor and manufacturing method thereof
  • Chemical field effect transistor gas-sensitive sensor and manufacturing method thereof
  • Chemical field effect transistor gas-sensitive sensor and manufacturing method thereof

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Embodiment Construction

[0042] The present invention will be described in detail below with reference to embodiments of the invention shown in the accompanying drawings. However, the idea of ​​the invention should not be limited to these examples, nor are these the only possible forms in which the invention can be implemented. It should be considered that different implementations that can achieve the same or equivalent functions are also included within the spirit and scope of the present invention. Further, these embodiments will disclose the present invention in detail and comprehensively, and fully convey the protection scope of the present invention to those skilled in the art.

[0043] figure 1 It is a structural schematic diagram of the MOSFET chemical sensor of the present invention. The source and drain regions of the device are made on the semiconductor substrate, and then the sensitive layer is made on the gate insulating layer by sputtering, deposition, self-assembly and other physical ...

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Abstract

The invention relates to a chemical field effect transistor gas-sensitive sensor and a manufacturing method thereof. The gas-sensitive sensor has at least one field effect transistor and comprises: a semiconductor substrate; a source region and a drain region formed on the semiconductor substrate; a channel region formed on the surface of the substrate between the source region and the drain region; an insulating layer formed on the channel region; a sensitive layer formed on the insulating layer and used as a grid electrode; and a sensor array composed of a plurality of field effect transistors having same and / or different grid region oxide layer areas, shapes, channel width / length ratios and / or grid oxide layer thicknesses. Compared with an ordinary MOSFET chemical field effect transistor, the chemical field effect transistor has a metal or polysilicon grid electrode removed, distinguishes the gas types and measures the gas concentration by changes of the switch state of devices, and has the advantages of high sensitivity, low manufacturing cost and the like.

Description

technical field [0001] The invention relates to the technical field of sensors, in particular to a chemical field effect transistor gas sensor and a manufacturing method thereof. Background technique [0002] A gas sensor (also known as a gas sensor) is a converter that converts a certain gas volume fraction into a corresponding electrical signal. The probe head conditions the gas sample through the gas sensor, which usually includes filtering out impurities and interfering gases, drying or refrigeration treatment, sample suction, and even chemical treatment of the sample for faster measurement by the chemical sensor. Classified by gas sensing characteristics, it can be mainly divided into: semiconductor gas sensor, electrochemical gas sensor, solid electrolyte gas sensor, contact combustion gas sensor, etc. [0003] Semiconductor gas sensor is a component made of metal oxide or metal semiconductor oxide material. When interacting with gas, surface adsorption or reaction oc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/414
Inventor 索武生
Owner 重庆芯原微科技有限公司
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