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Self-driven light detector and manufacturing method therefor

A technology of a photodetector and a manufacturing method, which is applied in the field of photoelectric detection and can solve the problems of small optical gain, long response time, and the need for an external power supply.

Active Publication Date: 2016-06-22
UNIV OF SCI & TECH BEIJING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The inventors have found that the photoconductive photodetectors in the prior art have a long response time, usually on the order of seconds, and the Schottky photodetectors in the prior art have low responsivity, that is, the optical gain is small
In addition, both photoconductive photodetectors and Schottky photodetectors can only detect light of a specific wavelength and require an external power supply

Method used

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  • Self-driven light detector and manufacturing method therefor
  • Self-driven light detector and manufacturing method therefor
  • Self-driven light detector and manufacturing method therefor

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Embodiment 1

[0022] The embodiment of the present invention provides a self-driven photodetector, such as figure 1 and figure 2 As shown, the self-driven photodetector includes a substrate 6, a channel layer 5 located on the substrate 6, a gate dielectric layer 4 located on the channel layer 5, a gate electrode 3 located on the gate dielectric layer 4, and a The silver electrode 2 and the platinum electrode 1 are connected at both ends of the layer 5, and the platinum electrode 1 is connected with the gate 3, wherein the material of the channel layer 5 is two-dimensional molybdenum disulfide, and the channel layer 5 includes 1 to 5 atomic layers .

[0023] Optionally, the material of the substrate 6 is silicon dioxide, the material of the gate dielectric layer 4 is hexagonal boron nitride (h-BN), and the material of the gate 3 is platinum.

[0024] The thickness of the channel layer 5 is 0.65 nm to 3.5 nm.

[0025] The inventors of the present application found that, according to the r...

Embodiment 2

[0030] An embodiment of the present invention provides a manufacturing method of a self-driving photodetector, and the manufacturing method is used to manufacture the self-driving photodetector described in the first embodiment. Specifically, the manufacturing method includes:

[0031] provide a base;

[0032] A channel layer is formed on the substrate, the material of the channel layer is two-dimensional molybdenum disulfide, and the channel layer includes 1 to 5 atomic layers;

[0033] On the substrate on which the channel layer is formed, a silver electrode and a platinum electrode are formed, and the silver electrode and the platinum electrode are respectively connected to both ends of the channel layer;

[0034] On the substrate on which the silver electrode and the platinum electrode are formed, a gate dielectric layer and a gate electrode are sequentially formed, and the gate electrode is connected to the silver electrode.

[0035] Optionally, the above-mentioned step ...

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Abstract

The invention discloses a self-driven light detector and a manufacturing method therefor and relates to the technical field of light detection. Self-driven photoelectric detection can be realized, short response time and high responsivity can be achieved, and light rays within a certain wavelength range can be detected. The self driven light detector comprises a substrate, a channel layer positioned on the substrate, a gate medium layer positioned on the channel layer, a grid electrode placed on the gate medium layer, a silver electrode and a platinum electrode, wherein the silver electrode and the platinum electrode are respectively connected with two ends of the channel layer which is made of two-dimension molybdenum disulfide, and the channel layer comprises 1-5 atomic layers. The self-driven light detector and the manufacturing method therefor are used for light detection.

Description

technical field [0001] The invention relates to the technical field of photoelectric detection, in particular to a self-driven photodetector and a manufacturing method thereof. Background technique [0002] Photodetectors are a class of devices that use various interactions between light and matter to convert light energy into other detectable energies. Photodetectors mainly include photoconductive photodetectors, p-n junction diode photodetectors and Schottky junction photodetectors. [0003] Specifically, the photoconductive photodetector is a photodetector made by utilizing the photoconductive effect of semiconductor materials. The so-called photoconductive effect refers to a physical phenomenon in which the conductivity of the irradiated material changes due to radiation. A Schottky photodetector is a photodetector made using a Schottky junction. Specifically, a Schottky photodetector is a photodetection device that uses a Schottky barrier with a certain height betwee...

Claims

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Application Information

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IPC IPC(8): H01L31/113H01L31/18
CPCH01L31/1136H01L31/18Y02P70/50
Inventor 齐俊杰张跃徐玉亮李峰
Owner UNIV OF SCI & TECH BEIJING