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Memristor device based on organic ferroelectric film material and preparation method thereof

A thin film material, organic iron technology, applied in the field of microelectronics, can solve the problems of inability to realize multi-state storage, lack of bending characteristics, poor compatibility of electronic skin, etc., and achieve excellent ferroelectric performance, low pollution and low cost. Effect

Inactive Publication Date: 2016-06-22
HUAWEI TECH CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of this, the first aspect of the embodiment of the present invention provides a memristor device based on an organic ferroelectric thin film material to solve the problem that the organic memristor device in the prior art does not have bending characteristics and is not compatible with electronic skin. Well, the problem of not being able to implement polymorphic storage

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  • Memristor device based on organic ferroelectric film material and preparation method thereof
  • Memristor device based on organic ferroelectric film material and preparation method thereof
  • Memristor device based on organic ferroelectric film material and preparation method thereof

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Embodiment 1

[0038] combine figure 1 , an embodiment of the present invention provides a memristor device based on an organic ferroelectric thin film material, including:

[0039] flexible substrate 101, and

[0040] a bottom electrode 102 formed on the flexible substrate, and

[0041] an organic ferroelectric thin film layer 103 formed on the bottom electrode, and

[0042] The upper electrode 104 is formed on the organic ferroelectric thin film layer, wherein the material of the organic ferroelectric thin film layer is vinylidene fluoride ferroelectric polymer.

[0043] from figure 1 It can be seen that the basic structure of the memristor device is a sandwich structure, wherein the organic ferroelectric thin film layer 103 is sandwiched between the upper electrode 104 and the bottom electrode 102 .

[0044] In the embodiment of the present invention, the vinylidene fluoride-based ferroelectric polymer includes poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE) copolymer], poly(...

Embodiment 2

[0054] combine figure 2 , an embodiment of the present invention provides a method for preparing a memristor device based on an organic ferroelectric thin film material, comprising the following steps:

[0055] S101: providing a flexible substrate 101;

[0056] In the embodiment of the present invention, the material of the flexible substrate 101 may be any one of polyethylene terephthalate, polydimethylsiloxane, polyethylene and polypropylene, but is not limited thereto. In this embodiment, the flexible substrate 101 is a polyethylene terephthalate (PET) substrate. The flexible substrate 101 can be cleaned and pretreated. In this embodiment, the PET substrate is ultrasonically cleaned with deionized water, ethanol, and acetone for 10 minutes to remove organic matter, metal ions, and impurity particles adhering to the surface of the substrate. , to facilitate the deposition and growth of organic ferroelectric thin films.

[0057] S102: preparing the bottom electrode 102 on...

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Abstract

The invention provides a memristor device based on an organic ferroelectric film material, comprising a flexible substrate, a bottom electrode formed on the flexible substrate, an organic ferroelectric film layer formed on the bottom electrode, and an upper electrode formed on the organic ferroelectric film layer, wherein the organic ferroelectric film layer is made of a vinylidene fluoride based ferroelectric polymer. The memristor device can achieve multi-state storage, has a memristive performance, has good mechanical property of being compatible with electronic skin, can simulate the functions of biological nerve synapses, has the advantages of small size, simple structure, low cost, non-volatility, quick reading and writing and the like, and provides the possibility of preparing a light, flexible and integrated artificial cognition equipment in the future. The invention further provides a method for preparing the memristor device based on an organic ferroelectric film material.

Description

technical field [0001] The invention relates to the technical field of microelectronics, in particular to a memristor device based on an organic ferroelectric thin film material and a preparation method thereof. Background technique [0002] Memristor, also known as memristor, is a kind of non-linear circuit element with resistive memory effect, which can change the resistance state with the change of external electric quantity, thereby realizing the memory function. At present, memristor is the electronic device whose function is closest to that of neuron synapse, which can simulate the response behavior of organisms to external environmental stimuli. The special electrical properties of memristors provide the possibility for the realization of artificial neural networks and also promote the development of electronic skin. [0003] However, the memristive materials in existing memristors are usually inorganic metal oxides, sulfides, nanoparticle aggregates, etc., and the m...

Claims

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Application Information

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IPC IPC(8): H01L45/00
Inventor 夏奕东许含霓黄文龙朱冠宇罗彩珠
Owner HUAWEI TECH CO LTD
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