A MEMS piezoresistive pressure sensor and preparation method thereof

A pressure sensor, piezoresistive technology, applied in the measurement of the property force of the piezoelectric resistance material, fluid pressure measurement by changing the ohmic resistance, etc., can solve the problem of inability to obtain high linearity, high sensitivity, etc. problem, to achieve high reliability, improved stability, high sensitivity and linearity

Active Publication Date: 2019-03-22
PEKING UNIV
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  • Application Information

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Problems solved by technology

At present, typical micro-pressure sensors cannot obtain high linearity while obtaining high sensitivity, and in turn, cannot guarantee high sensitivity while obtaining high linearity

Method used

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  • A MEMS piezoresistive pressure sensor and preparation method thereof
  • A MEMS piezoresistive pressure sensor and preparation method thereof
  • A MEMS piezoresistive pressure sensor and preparation method thereof

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preparation example Construction

[0042] The preparation method of the MEMS piezoresistive pressure sensor of this embodiment: make 4 groups along the crystal direction at the midpoint position of the edge line of the square diaphragm (or circular diaphragm) produced by the back cavity etching process. The varistors of cloth, the number of each group of varistors can be arbitrary (generally 1-5), and the present embodiment is 4; The boomerang structure is etched out, the varistor is located at the edge of the boomerang structure, and the varistor is in the stress concentration area. Specifically, the steps of the method include:

[0043] 1) Manufacturing varistors and heavily doped contact areas by ion implantation on the front side of the silicon wafer;

[0044] 2) Double-sided fabrication of SiO 2 , and then make Si on both sides 3 N 4 , as a back cavity etching mask, the back cavity area of ​​the silicon wafer is photoetched and a back cavity etching window is etched, and then the back cavity etching i...

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Abstract

The invention discloses a MEMS piezoresistive pressure sensor and a production method thereof. A silicon strain film provided with a boomerang structure is disclosed for the first time, and piezoresistors are arranged on the stress concentration part of the boomerang structure, and then the sensitivity and the linearity of the piezoresistive pressure sensor can be improved. The SiO2 / Si3N4 of the LPCVD are selected to be used as the mask of the KOH corrosion technology, and the barrier characteristic of the mask on the K+ can be improved according to the KOH back cavity corrosion technology, and therefore the high reliability of the sensor can be guaranteed. By adopting the silica glass anodic bonding technology, the glass is used for the stress buffering, and the stability of the sensor can be improved in the follow-up packaging and the follow-up tests. The MEMS piezoresistive pressure sensor is advantageous in that the higher sensitivity and the higher linearity can be provided at the same time, and the production method is compatible to the universal MEMS processing technology, and in addition, the product reliability and the product yield are high.

Description

technical field [0001] The invention belongs to the field of micro-electro-mechanical system (MEMS) sensor design, and relates to a MEMS piezoresistive pressure sensor and a method for realizing the manufacture of a silicon wafer-level pressure sensor by using a MEMS processing method. Background technique [0002] MEMS technology is developed based on IC manufacturing technology, but there is a big difference between the two. The traditional IC processing technology is planar two-dimensional processing. The outstanding advantage of IC is its strong ability to process electrical signals; while MEMS technology is three-dimensional processing. The outstanding advantage of MEMS is that it can realize the conversion from non-electrical signals to electrical signals on the chip scale. The piezoresistive pressure sensor based on MEMS technology has been widely used since MEMS was produced, and its application fields include automotive, aerospace, biomedical and industrial control,...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01L1/18G01L9/06
CPCG01L1/18G01L9/06
Inventor 关淘淘杨芳黄贤张大成王玮姜博岩何军张立付锋善李丹李睿范泽新赵前程
Owner PEKING UNIV
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