Highly conductive flexible self-supported graphene film and preparation method thereof

A graphene film, self-supporting technology, applied in the direction of carbon-silicon compound conductors, etc., can solve the problems of low material utilization, unfavorable batch production, and large quantities, and achieve high raw material utilization, convenient operation, and simple process requirements.

Inactive Publication Date: 2016-07-06
SOUTHEAST UNIV
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Problems solved by technology

The self-supporting graphene film prepared by the solvent evaporation method requires a large amount of gr

Method used

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  • Highly conductive flexible self-supported graphene film and preparation method thereof
  • Highly conductive flexible self-supported graphene film and preparation method thereof
  • Highly conductive flexible self-supported graphene film and preparation method thereof

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preparation example Construction

[0022] A preparation method of a highly conductive flexible self-supporting paper-like graphene film, comprising the steps of:

[0023] (1) According to the improved Hummers method, using graphite as a raw material, preparing a graphene oxide aqueous solution with a concentration of 0.2 to 3 mg / ml;

[0024] (2) The solid substrate is first subjected to plasma surface treatment, and the graphene oxide solution is titrated on the treated solid substrate, and further vacuum-dried at 50-100 degrees Celsius for 2-6 hours to obtain a graphene oxide film;

[0025] (3) Putting the graphene oxide film on the solid substrate into the aqueous solution of hydroiodic acid with a concentration of 47-80wt.%, and then reacting in an oil bath at 50-200 degrees Celsius under airtight conditions for 1-5 hours to obtain a suspension in Free-standing graphene films on the surface of aqueous hydroiodic acid solution. The mass ratio of hydroiodic acid to graphite oxide film is 5-30:1.

[0026] (4)...

Embodiment 1

[0027] Embodiment 1: the preparation of highly conductive flexible self-supporting graphene film

[0028] (1) according to the improved Hummers method (document ACSNano4 (8): 4806 (2010), Improvedsynthesisofgrapheneoxide), with graphite as raw material, the graphene oxide aqueous solution that preparation concentration is 1.5mg / ml;

[0029] (2) The glass substrate is subjected to plasma surface treatment, and the graphene oxide aqueous solution is evenly titrated on the glass substrate, and further vacuum-dried at 65 degrees Celsius for 3 hours to obtain a graphene oxide film;

[0030] (3) Putting the graphene oxide film on the glass substrate into a concentration of 55wt.% hydroiodic acid aqueous solution, reacting in an oil bath at 100 degrees Celsius under airtight conditions for 2h, to obtain the self- Supported graphene film. The mass ratio of hydroiodic acid to graphite oxide film is 5:1.

[0031] (4) Transfer the self-supporting graphene film to pure water for immersi...

Embodiment 2

[0032] Example 2: Preparation of highly conductive flexible self-supporting graphene film

[0033] (1) according to the improved Hummers method, taking graphite as raw material, the graphene oxide aqueous solution that preparation concentration is 0.5mg / ml;

[0034] (2) The glass substrate is subjected to plasma surface treatment, and the graphene oxide aqueous solution is evenly titrated on the glass substrate, and further vacuum-dried at 100 degrees Celsius for 2 hours to obtain a graphene oxide film;

[0035] (3) Putting the graphene oxide film on the glass substrate into a concentration of 80wt.% hydroiodic acid aqueous solution, reacted for 5h in an oil bath at 50 degrees centigrade under airtight conditions, and obtained the self- Supported graphene film. The mass ratio of hydroiodic acid to graphite oxide film is 15:1.

[0036] (4) Transfer the self-supporting graphene film to pure water for immersion, rinse, and dry at room temperature to obtain a highly conductive s...

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Abstract

The invention discloses a highly conductive flexible self-supporting graphene film and a preparation method thereof: according to the improved Hummers method, graphite is used as a raw material to prepare a uniformly dispersed graphene oxide aqueous solution; the solid substrate is first subjected to plasma surface treatment , and the graphene oxide solution was titrated on a solid substrate and dried to form a film. The obtained graphene oxide film is put into hydroiodic acid aqueous solution and heated for reduction, and the obtained graphene film can be automatically separated from the solid substrate to obtain a highly conductive flexible self-supporting graphene film. The method is simple in preparation, convenient in operation, simple in equipment and process requirements, cheap in raw materials and low in cost, and can realize large-scale industrial production. The prepared self-supporting graphene film has controllable thickness, good flexibility, and high conductivity, and is expected to be used in flexible electronics, supercapacitors, and wearable sensors.

Description

technical field [0001] The invention belongs to the technical field of graphene material preparation, in particular to a method for preparing a highly conductive flexible self-supporting graphene film. Background technique [0002] Graphene material is a two-dimensional layered, single-atom-thick carbon element, composed of sp 2 Hybridized carbon atoms are arranged in an orderly manner on a two-dimensional plane. Since its discovery in 2004, graphene has attracted widespread attention and great interest from scientists for its unique physical and chemical properties, and has a very wide range of applications. At present, the preparation methods of graphene mainly include mechanical exfoliation, chemical vapor deposition, solvent exfoliation, and chemical oxidation. Among them, the chemical oxidation method has been considered as an effective way to achieve large-scale production of graphene due to the advantages of simple process, reliability and low cost. The graphene ox...

Claims

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Application Information

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IPC IPC(8): C04B35/52H01B1/04
CPCC04B35/522H01B1/04
Inventor 徐华路一飞项建新顾忠泽
Owner SOUTHEAST UNIV
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