Nanographene low-voltage power cable and manufacturing method thereof

Abstract

The invention discloses a nanographene low-voltage power cable and a manufacturing method thereof. The nanographene low-voltage power cable comprises conductors, insulating layers and an outer sheath layer, wherein each conductor is formed by twisting a plurality of copper wires or aluminum wires along the length direction; the nanographene low-voltage power cable is characterized in that a nanographene layer coats the outside of each conductor; each insulating layer coats the outside of each nanographene layer to form an insulated wire core; 2-6 insulated wire cores are arranged; a wrapping layer is arranged at the outer sides of all insulated wire cores to form a cable core; and the outer sheath layer coats the outer side of the cable core. The manufacturing method comprises the following steps: drawing wires and twisting the conductors; carrying out electrostatic coating of the nanographene layers; manufacturing the insulating layers through extrusion; winding the wrapping layer to form the cable core; and extruding the outer sheath layer to obtain the nanographene low-voltage power cable. By the skin effect and the high conductivity of the nanographene, the sections of the cable conductors are reduced by 15%-30%; the carrying capacity can be improved by 5%; the production cost is greatly reduced; and the conductivity is improved.

Description

technical field [0001] The invention relates to an improvement of a low-voltage power cable and a manufacturing method thereof, in particular to a nano-graphene low-voltage power cable and a manufacturing method thereof. Background technique [0002] Electrical conductivity is a major key to weighing the quality of wires and cables. At present, a typical cable in the prior art is composed of a conductor 1, an insulating layer 2, a tape layer 3 and an outer sheath layer 4, such as figure 1 As shown, the conductor 1 and the insulating layer 2 covering the conductor 1 form a group of insulated wire cores, and more than two groups of insulated wire cores are covered by the tape layer 3, and the outer sheath is extruded outside the tape layer 3. Set layer 4. Because this cable structure is not conducive to the full play of the conductor material, it is a waste of material. Graphene has excellent electrical conductivity and is a semiconductor with zero energy gap. The speed of e...

AI Technical Summary

Problems solved by technology

Because this kind of cable structure is not conducive to the full play of the conductor material, it depends on the waste of material

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