A terahertz quantum cascade laser gain spectrum measurement device and its manufacturing method

Abstract

The invention provides a terahertz quantum cascade laser gain spectrum measuring device and a manufacturing method thereof. The device comprises a semi-insulating GaAs substrate, a GaAs buffer layer, an n-type heavily doped lower contact layer, an active region, an n-type heavily doped upper contact layer, a first upper electrode metal layer, a second upper electrode metal layer, a third upper electrode metal layer and a lower electrode metal layer, wherein the GaAs buffer layer is located on the upper surface of the substrate; the n-type heavily doped lower contact layer is located on the surface of the buffer layer; the active region is located on the surface of the lower contact layer; the n-type heavily doped upper contact layer is located on the surface of the active region; the first upper electrode metal layer, the second upper electrode metal layer and the third upper electrode metal layer are located on the surface of the n-type heavily doped upper contact layer and are separated from one another respectively; a deep isolation groove which sinks to the GaAs buffer layer is formed between the first upper electrode metal layer and the second upper electrode metal layer; the third upper electrode metal layer is the upper electrode metal layer which can form high waveguide loss after being annealed; and the lower electrode metal layer is located on the surface of the n-type heavily doped lower contact layer and two sides of the active region. Through the terahertz quantum cascade laser gain spectrum measuring device and the manufacturing method thereof provided by the invention, the problem that the complete gain quantum change condition of the THz QCL within a workable current density range cannot be measured in the prior art is solved.

Description

technical field [0001] The invention relates to the technical field of laser semiconductors, in particular to a terahertz quantum cascade laser gain spectrum measuring device and a manufacturing method thereof. Background technique [0002] Terahertz (THz) wave refers to a section of electromagnetic wave with a frequency between 100GHz and 10THz, which is between microwave and infrared wave. In terms of energy, the photon energy of THz waves covers the characteristic energy of semiconductors and plasmas, and also matches the rotation and vibration energies of organic and biological macromolecules, so it can be used in material detection, environmental monitoring and other fields; from the frequency domain From the looks of it, the frequency of THz waves is high, which is suitable for space security communication and high-speed signal processing and other fields; in addition, THz waves can penetrate a variety of non-conductive materials, such as plastics, wood, paper, etc., a...

AI Technical Summary

Problems solved by technology

[0008] In view of the shortcomings of the prior art described above, the object of the present invention is to provide a terahertz quantum cascade laser gain spectrum measurement device and its manufacturing method, which is used to solve the problem that the current density of THz QCL cannot be measured in the prior art. The problem with the complete gain spectrum variation across the range

Images