Light-emitting diode having heat conducting layer and preparation method thereof

A technology of light-emitting diodes and heat-conducting layers, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of reduced, increased, and inconspicuous lifespan, and achieve the reduction of excessive local temperature, reduced service life, and reduced warpage The effect of curvature

Active Publication Date: 2016-07-13
ANHUI SANAN OPTOELECTRONICS CO LTD
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Problems solved by technology

[0003] At present, sapphire is mainly used as the substrate in the preparation process of light-emitting diodes, and N-type layer, light-emitting layer and P-type layer are deposited sequentially on it. It is widely used because of its good chemical stability, moderate price and mature preparation process. However, its Poor thermal conductivity is not obvious when the device works with low current, but the problem is very prominent when the power device is operated with high current, for example, the light efficiency and performance decrease due to poor heat dissipation, and the life expectancy is reduced; at the same time, with the sapphire lining As the size of the bottom increases, the warpage caused by thermal mismatch gradually increases, which seriously affects the yield of the chip end process.

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  • Light-emitting diode having heat conducting layer and preparation method thereof
  • Light-emitting diode having heat conducting layer and preparation method thereof
  • Light-emitting diode having heat conducting layer and preparation method thereof

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Embodiment Construction

[0029] The embodiments of the present invention will be described in detail below with reference to the accompanying drawings, but the present invention can be implemented in various ways defined and covered by the claims.

[0030] See attached figure 1 The present invention proposes a light-emitting diode with a heat-conducting layer 200, which at least includes: a substrate 100 and an epitaxial layer 300 composed of an N-type layer 310, a light-emitting layer 320, and a P-type layer 330 sequentially located on the substrate 100, the The light emitting diode further includes a heat conduction layer 200 inserted between the substrate 100 and the N-type layer 310 , and further includes a buffer layer 400 between the heat conduction layer 200 and the N-type layer 310 . Wherein, the substrate 100 is a sapphire substrate or a silicon carbide substrate or a silicon substrate. The N-type layer 310 includes a high-temperature GaN buffer layer and an n-GaN layer (not shown in the fig...

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Abstract

The invention, which belongs to the field of the semiconductor technology, especially relates to a light-emitting diode having a heat conducting layer and a preparation method thereof. The light-emitting diode at least comprises a substrate, an N type layer, a light emitting layer and a P type layer, wherein the N type layer, the light emitting layer and the P type layer are arranged on the substrate successively. And a heat conducting layer formed by alternate lamination of aluminium nitride layers and graphene particle layers is inserted between the substrate and an epitaxial layer. Therefore, problems that heat dissipation can not be carried out uniformly during current injection into the existing light-emitting diode and a warping phenomenon occurs due to uniform heat dissipation during large-size epitaxial wafer growth can be solved.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a light-emitting diode with a heat-conducting layer and a preparation method thereof. Background technique [0002] Light Emitting Diode (English for LightEmittingDiode, referred to as LED) is a solid-state semiconductor light-emitting diode device, which is widely used in lighting fields such as indicator lights and display screens. With the increasingly fierce competition in the LED light-emitting diode market, obtaining high-brightness products under the condition of reducing production costs has become an inevitable requirement for the mass production process of the light-emitting diode industry. [0003] At present, sapphire is mainly used as the substrate in the preparation process of light-emitting diodes, and N-type layer, light-emitting layer and P-type layer are deposited sequentially on it. It is widely used because of its good chemical stability, mo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/64H01L33/00
CPCH01L33/005H01L33/64
Inventor 宋长伟程志青黄文宾黄理承江汉林兓兓张家宏
Owner ANHUI SANAN OPTOELECTRONICS CO LTD
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