InGaAs MOSFET device structure

Abstract

The invention discloses an MOSFET device structure with an InGaAs channel. The structure comprises a p-type InGaAs semiconductor layer (102), an N-type heavily doped InP layer (103), an N-type heavily doped InGaAs ohmic contact cap layer (104), a source-drain metal layer (105), a trapezoidal gate channel structure, a high-K dielectric layer (106) and a gate metal layer (107), wherein the p-type InGaAs semiconductor layer (102) is arranged on an indium phosphide substrate (101); the N-type heavily doped InP layer (103) is formed on the p-type InGaAs semiconductor layer; the N-type heavily doped InGaAs ohmic contact cap layer (104) is formed on the N-type heavily doped InP layer; the source-drain metal layer (105) is formed on the N-type heavily doped InGaAs ohmic contact cap layer; the trapezoidal gate channel structure is formed by corrosion in the N-type heavily doped InP layer (103) and the InGaAs ohmic contact cap layer (104) and in the source-drain metal layer; the high-K dielectric layer (106) is formed on the trapezoidal gate channel structure; and the gate metal layer (107) is arranged on the high-K dielectric layer. The MOSFET device can be used for manufacturing a digital integrated circuit.

Description

technical field [0001] The invention relates to the technical field of semiconductor integrated circuit manufacturing, in particular to a MOSFET device structure in an InGaAs channel layer to improve the performance of the CMOS device, and is applied to the high-performance CMOS technical field. Background technique [0002] Compared with silicon materials, Ⅲ-Ⅴ compound semiconductor materials have the advantages of high carrier mobility, large forbidden band width, etc., and have good characteristics in thermal, optical and electromagnetic aspects. After silicon-based CMOS technology is approaching its physical limit, III-V compound semiconductor materials may become candidate channel materials due to their high electron mobility characteristics for making CMOS devices. However, there are many different physical and chemical properties between III-V semiconductor devices and silicon devices, and the MOS structure and process suitable for silicon devices may not be applicabl...

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Problems solved by technology

However, there are many different physical and chemical properties from III-V semiconductor devices and silicon devices, and the MOS structure and process suitable for silicon devices may not be applicable to III-VMOS devices

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