Method and system for realizing P-type nitride enhanced HEMT (High Electron Mobility Transistor) through in-situ etching monitoring

Abstract

The invention discloses a method and a system for realizing a P-type nitride enhanced HEMT (High Electron Mobility Transistor) through in-situ etching monitoring. In one typical embodiment, through directly exposing an etching surface of an etching sample in a plasma and placing a test wafer plated with electrodes in an etching position equivalent to a sample in etching equipment, the etching rate on the sample is equal to that on the test wafer, so that an etching condition of a P-type semiconductor on the sample can be monitored through the change of the current between two electrodes on the test wafer, and then the obtained current signal is input into a computer and the computer controls the etching condition to realize a controllable and precise etching technology with feedback. According to the method and the system, the defects caused by realizing different etching depths through the single etching condition, the single etching rate and the etching time simply in the existing etching technology are effectively solved, and preparation of the P-type cap layer enhanced HEMT device can be realized at high precision and high repeatability.

Description

technical field [0001] The invention relates to a method and a system for developing a precise and complicated etching process, in particular to a method and a system for realizing a P-type nitride enhanced HEMT through in-situ etching monitoring. Background technique [0002] When the existing III-nitride semiconductor HEMT devices are used as high-frequency devices or high-voltage high-power switching devices, especially when used as power switching devices, the enhancement mode HEMT device is helpful to improve the safety of the system compared with the depletion mode HEMT device performance, reduce device loss and simplify circuit design. At present, the main methods of realizing enhanced HEMT include thin barrier layer, concave gate structure, P-type capping layer and F treatment and other technologies. But every technology has its own shortcomings. For example, the world's first enhancement mode HEMT device is realized by using a thinner barrier layer. This method do...

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Problems solved by technology

[0004] The main purpose of the present invention is to provide a method, system and application thereof for monitoring in-situ etching of P-type semiconductor HEMT devices, especially a method and system for developing precise and complex etching processes, so as to overcome the shortcomings of the prior art insufficient

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