Semiconductor structure and formation method thereof
A semiconductor and plasma technology, applied in the fields of semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of unstable performance, poor transistor morphology, and increased process difficulty of high-K metal gate transistors. Reliable performance, good appearance, dense interior
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[0032] As mentioned in the background art, the high-K metal gate transistors formed in the prior art have poor morphology and unstable performance.
[0033] After research, it is found that the high-K metal gate transistor needs to be formed by a gate last process. Figure 1 to Figure 4 It is a schematic cross-sectional structure diagram of a process of forming a high-K metal gate transistor by using a gate-last process according to an embodiment of the present invention.
[0034] Please refer to figure 1 , providing a substrate 100; forming a gate dielectric layer 101 on the surface of the substrate 100, and a dummy gate layer 102 located on the surface of the gate dielectric layer 101; wall; forming a source region and a drain region 104 in the substrate 100 on both sides of the sidewall and the dummy gate layer 102 .
[0035] Please refer to figure 2 , forming a dielectric layer 105 on the surface of the substrate 100 , the surface of the dielectric layer 105 is flush w...
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