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Preparation method of doped polysiloxanes sol antireflection film based on interface modification

A technology of polysiloxane sol and anti-reflection film, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problem that the surface hardness of the anti-reflection film is not high enough, the scratch resistance is poor, and the performance and life of the product are affected and other problems, to achieve the effect of orderliness and low packing density, anti-reflection effect, and increase surface hardness

Active Publication Date: 2016-08-03
SHAANXI COAL & CHEM TECH INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the existing products, the surface hardness of the anti-reflection film is not high enough, the scratch resistance is poor, and it is easy to scratch during use, thus affecting the performance and life of the product

Method used

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  • Preparation method of doped polysiloxanes sol antireflection film based on interface modification
  • Preparation method of doped polysiloxanes sol antireflection film based on interface modification
  • Preparation method of doped polysiloxanes sol antireflection film based on interface modification

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Experimental program
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Effect test

Embodiment 1

[0036] (1) Configure SiO 2 Sol: Alkaline SiO was prepared from tetraethyl orthosilicate, absolute ethanol, deionized water and ammonia water as raw materials 2 Sol, wherein the molar ratio of ethyl orthosilicate: absolute ethanol: deionized water: ammonia water is 1:45:3:0.1. Preparation of basic SiO 2 The method of sol is: after magnetically stirring the ethyl orthosilicate absolute ethanol solution for 3-10 minutes, add the solution of absolute ethanol, deionized water and ammonia water dropwise to the ethyl orthosilicate absolute ethanol solution, and continue After magnetic stirring for 2 h, seal and age at room temperature for 5 d.

[0037] (2) SiO 2 Sol modification treatment: Alkaline SiO 2 The sol is modified by polysiloxane modification technology to obtain a coating solution. Doped with polysiloxane and SiO 2 The volume ratio of the sol was 8%.

[0038](3) Clean the glass substrate, immerse the cleaned glass substrate in the sol, pull it after soaking for 30s,...

Embodiment 2

[0044] (1) Configure SiO 2 Sol: Alkaline SiO was prepared from tetraethyl orthosilicate, absolute ethanol, deionized water and ammonia water as raw materials. 2 Sol, wherein the molar ratio of ethyl orthosilicate: absolute ethanol: deionized water: ammonia water is 1:60:8:0.1. Preparation of basic SiO 2 The method of sol is: after magnetically stirring the ethyl orthosilicate absolute ethanol solution for 3-10 minutes, add the solution of absolute ethanol, deionized water and ammonia water dropwise to the ethyl orthosilicate absolute ethanol solution, and continue After magnetically stirring until uniform, seal and age at room temperature for 5 days.

[0045] (2) SiO 2 Sol modification treatment: Alkaline SiO 2 The sol is modified by polysiloxane modification technology to obtain a coating solution. Doped with polysiloxane and SiO 2 The volume ratio of the sol was 12%.

[0046] (3) Clean the glass substrate, immerse the cleaned glass substrate in the sol, pull it after ...

Embodiment 3

[0052] (1) Configure SiO 2 Sol: Alkaline SiO was prepared from tetraethyl orthosilicate, absolute ethanol, deionized water and ammonia water as raw materials. 2 Sol, wherein the molar ratio of ethyl orthosilicate: absolute ethanol: deionized water: ammonia water is 1:80:1:0.1. Preparation of basic SiO 2 The method of sol is: after magnetically stirring the ethyl orthosilicate absolute ethanol solution for 3-10 minutes, add the solution of absolute ethanol, deionized water and ammonia water dropwise to the ethyl orthosilicate absolute ethanol solution, and continue After magnetically stirring until uniform, seal and age at room temperature for 5 days.

[0053] (2) SiO 2 Sol modification treatment: Alkaline SiO 2 The sol is modified by polysiloxane modification technology to obtain a coating solution. Doped with polysiloxane and SiO 2 The volume ratio of the sol was 2%.

[0054] (3) Clean the glass substrate, immerse the cleaned glass substrate in the sol, pull it after s...

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Abstract

The present invention discloses a preparation method of a doped polysiloxanes sol antireflection film based on interface modification. After an antireflection film is grown on the surface of a substrate, the antireflection film is subjected to preprocessing, and it is ensured that a hydroxy group is formed on the antireflection film; the substrate with the antireflection film is immersed in the solution including sulfydryl, a single-molecule function layer including the sulfydryl is formed at the antireflection film through the molecular self-assembly mode; and finally, the single-molecule function layer is cleaned by deionized water, the residual solvent is removed, and the single-molecule function layer is dried by blowing. According to the invention, a single-molecule function layer is introduced to the antireflection film, the molecular chain of the materials of the single-molecule function layer is short and has a certain rigidness, and when the single-molecule function layer is uniformly covered at the surface of the materials, the vibration and the energy dissipation are sealed, the Van der Waals acting force between the molecular is small, the orderliness and the bulk density are low, therefore, the surface hardness of the antireflection film is effectively improved, the transmissivity of the antireflection film is enhanced, and the obvious permeability increasing effect is provided.

Description

【Technical field】 [0001] The invention belongs to the field of photovoltaic technology, and relates to a nano anti-reflection film, in particular to an interface modification method of the nano anti-reflection film. 【Background technique】 [0002] In the field of solar cells, the conversion efficiency of solar cells can be effectively improved by increasing the light transmittance of the glass substrate, which has always been a hot and difficult point in industry research. Coating an anti-reflection coating on the glass substrate of the solar cell can minimize the reflectivity and increase the transmittance. Developed nano anti-reflection coating glass for solar photovoltaics with high transmittance within the response spectrum range of solar cells, which can improve the conversion efficiency of solar cells to the same extent, reduce power generation costs, improve the market competitiveness of solar cell power generation, and shorten the time for grid-connected power genera...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0216
CPCH01L31/02168
Inventor 赵炎魏葳
Owner SHAANXI COAL & CHEM TECH INST
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