Low-conduction maintaining circuit of gate-turn-off thyristor and control method
A technology for maintaining circuits and thyristors, which is applied in the direction of climate sustainability, electrical components, and high-efficiency power electronics conversion. It can solve the problems of large drive power consumption, increased drive loss, and dynamic adjustment of current value to achieve power utilization efficiency. High, reduced drive loss, high pulse current effect
Active Publication Date: 2016-08-10
WUXI TONGFANG MICROELECTRONICS
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Problems solved by technology
[0002] Gate turn-off thyristor (GTO) is a high-power current-mode power semiconductor device. Compared with insulated gate bipolar transistor (IGBT), metal-oxide semiconductor field-effect transistor (MOSFET) and other field-controlled semiconductor devices , the driving power consumption of GTO driving current type devices is often large, and the driving circuit is complex, and the control method is generally an open-loop non-controlling method, that is, a fixed DC driving current is set, and the current value cannot be dynamically adjusted according to the demand. The method causes the driving loss to increase, and the electric energy cannot be used effectively, and these losses also increase the aging of the driving circuit components, reducing the overall reliability of the system with GTO as the core component
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[0029] The present invention will be further described below in conjunction with specific drawings and embodiments.
[0030] According to attached figure 1 Said, a gate can be turned off thyristor low conduction maintenance circuit, characterized in that: comprising a comparator U 1 , control chip U 2 , current sensor 1, temperature sensor 2 and current loop 3, the comparator U 1 The input terminal is connected with the current sensor 3 and the reference voltage V ref , the output terminal and the control chip U 2 connected, the current sensor 1 is connected to the current loop 3, and the control chip U 2 Connect with temperature sensor 2 and current loop 3, described temperature sensor 2 is connected with GTO diode 8, and described current loop 3 comprises first current loop 4, second current loop 5, third current loop 6 and fourth current loop 7 , the control chip U 2 It is realized by writing a program on FPGA or CPLD chip.
[0031] Such as image 3 As shown, the fi...
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The invention designs a low-conduction maintaining circuit of a gate-turn-off (GTO) thyristor and a control method. The low-conduction maintaining circuit is characterized by comprising a comparator U1, a control chip U2, a current sensor, a temperature sensor and a current loop, wherein the input end of the comparator U1 is connected with the current sensor and a reference voltage Vref, the output end of the comparator U1 is connected with the control chip U2, the current sensor is connected with the current loop, the control chip U2 is connected with the temperature sensor and the current loop, and the temperature sensor is connected with a GTO diode. In the circuit disclosed by the invention, metal-oxide-semiconductor field-effect transistors (MOSFETs) QE, QP, QC and QS are sequentially switched on and switched off by different time sequence logics under the control of the control chip U2 according to a CS driving control signal to form the current loop, so that high pulse current and conduction maintaining current which are required for conduction of the GTO diode are achieved; and meanwhile, the circuit also integrates functions of current sensing and temperature detection, and the injection current to the GTO diode is further adjusted and controlled.
Description
technical field [0001] The invention relates to a low-conduction maintaining circuit and a control method, in particular to a low-conduction maintaining circuit and a control method of a gate-off thyristor, belonging to the technical field of drive control of high-power current-type power semiconductor devices. Background technique [0002] Gate turn-off thyristor (GTO) is a high-power current-mode power semiconductor device. Compared with insulated gate bipolar transistor (IGBT), metal-oxide semiconductor field-effect transistor (MOSFET) and other field-controlled semiconductor devices , the driving power consumption of GTO driving current type devices is often large, and the driving circuit is complex, and the control method is generally an open-loop non-controlling method, that is, a fixed DC driving current is set, and the current value cannot be dynamically adjusted according to the demand. This way increases the driving loss and cannot effectively use electric energy, ...
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IPC IPC(8): H02M1/06
CPCH02M1/06H02M1/0048Y02B70/10
Inventor 潘烨白玉明张海涛
Owner WUXI TONGFANG MICROELECTRONICS