A low conduction maintenance circuit and control method of a gate-off thyristor
A technology for maintaining circuits and thyristors. It is applied in the fields of climate sustainability, electrical components, and high-efficiency power electronic conversion. It can solve the problems of large driving power consumption, increased driving loss, and dynamic adjustment of current value, so as to achieve power utilization efficiency. High, reduced drive loss, high pulse current effect
Active Publication Date: 2018-03-09
WUXI TONGFANG MICROELECTRONICS
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Problems solved by technology
[0002] Gate turn-off thyristor (GTO) is a high-power current-mode power semiconductor device. Compared with insulated gate bipolar transistor (IGBT), metal-oxide semiconductor field-effect transistor (MOSFET) and other field-controlled semiconductor devices , the driving power consumption of GTO driving current type devices is often large, and the driving circuit is complex, and the control method is generally an open-loop non-controlling method, that is, a fixed DC driving current is set, and the current value cannot be dynamically adjusted according to the demand. The method causes the driving loss to increase, and the electric energy cannot be used effectively, and these losses also increase the aging of the driving circuit components, reducing the overall reliability of the system with GTO as the core component
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[0029] The present invention will be further described below in conjunction with specific drawings and embodiments.
[0030] According to attached figure 1 Said, a gate can be turned off thyristor low conduction maintenance circuit, characterized in that: comprising a comparator U 1 , control chip U 2 , current sensor 1, temperature sensor 2 and current loop 3, the comparator U 1 The input terminal is connected with the current sensor 3 and the reference voltage V ref , the output terminal and the control chip U 2 connected, the current sensor 1 is connected to the current loop 3, and the control chip U 2 Connect with temperature sensor 2 and current loop 3, described temperature sensor 2 is connected with GTO diode 8, and described current loop 3 comprises first current loop 4, second current loop 5, third current loop 6 and fourth current loop 7 , the control chip U 2 It is realized by writing a program on FPGA or CPLD chip.
[0031] Such as image 3 As shown, the fi...
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The present invention designs a low-conduction maintenance circuit and control method for gate-off thyristors, which is characterized in that it includes a comparator U1, a control chip U2, a current sensor, a temperature sensor and a current loop, and the input terminal of the comparator U1 A current sensor and a reference voltage Vref are connected, the output terminal is connected to the control chip U2, the current sensor is connected to the current loop, the control chip U2 is connected to the temperature sensor and the current loop, and the temperature sensor is connected to the GTO diode; the present invention The circuit is based on the CS drive control signal, under the control of the control chip U2, through different sequential logics, turn on and off the MOSFET devices QE, QP, QC, QS in sequence to form a current loop to achieve the high voltage required for the conduction of the GTO diode. Pulse current and conduction maintenance current. At the same time, the circuit also integrates current sensing function and temperature detection function to further realize the regulation and control of the GTO diode injection current.
Description
technical field [0001] The invention relates to a low-conduction maintaining circuit and a control method, in particular to a low-conduction maintaining circuit and a control method of a gate-off thyristor, belonging to the technical field of drive control of high-power current-type power semiconductor devices. Background technique [0002] Gate turn-off thyristor (GTO) is a high-power current-mode power semiconductor device. Compared with insulated gate bipolar transistor (IGBT), metal-oxide semiconductor field-effect transistor (MOSFET) and other field-controlled semiconductor devices , the driving power consumption of GTO driving current type devices is often large, and the driving circuit is complex, and the control method is generally an open-loop non-controlling method, that is, a fixed DC driving current is set, and the current value cannot be dynamically adjusted according to the demand. This way increases the driving loss and cannot effectively use electric energy, ...
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IPC IPC(8): H02M1/06
CPCH02M1/06H02M1/0048Y02B70/10
Inventor 潘烨白玉明张海涛
Owner WUXI TONGFANG MICROELECTRONICS