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Nitride light-emitting diode

A technology of light-emitting diodes and nitrides, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., and can solve problems such as reducing luminous intensity, ESD, and electronic leakage

Active Publication Date: 2016-08-17
XIAMEN SANAN OPTOELECTRONICS TECH CO LTD
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Problems solved by technology

Because there are defects in the bottom layer of nitride light-emitting diodes, when growing quantum wells, the defects will extend to form V-shaped pits and form non-radiative recombination centers, resulting in electrons easily leaking through the leakage channels of V-shaped pits, forming leakage and non-radiative recombination, and reducing luminescence Strength and ESD

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Embodiment Construction

[0016] In traditional nitride light-emitting diodes, defects will be formed during the nitride growth process due to lattice mismatch and thermal mismatch. When growing multiple quantum wells, the dislocations will extend to form V-shaped pits, such as figure 1 As shown; the V-shaped pit forms a non-radiative recombination center, causing electrons to easily leak through the leakage channel of V-pits, forming leakage and non-radiative recombination, reducing luminous intensity and ESD.

[0017] In order to solve the problem that V-shaped pits form leakage channels and non-radiative recombination centers in conventional nitride LEDs, the present invention proposes a nitride light-emitting diode, such as figure 2 As shown, it includes: substrate 100, buffer layer 101, N-type nitride 102, multiple quantum wells 103, the first AlN / Al x Ga 1-x N superlattice (104a / 104b), local quantum state formed by In quantum dots / InN quantum dots (104c), the second AlN / Al x Ga 1-x Composite ...

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Abstract

The invention discloses a nitride light-emitting diode. The nitride light-emitting diode sequentially comprises a substrate, N type nitride, a multi-quantum well, V-shaped pits, first AlN / AlxGa1-xN superlattices, local area quantum states formed by In quantum dots / InN quantum dots, a composite structure formed by second AlN / AlxGa1-xN superlattices, P type nitride and a P type contact layer, the first AlN / AlxGa1-xN superlattices, the local area quantum states formed by the In quantum dots / InN quantum dots and the composite structure formed by the second AlN / AlxGa1-xN superlattices are deposited in the V-shaped pits of the multi-quantum well, an upper AlN / AlxGa1-xN superlattice structure and a lower AlN / AlxGa1-xN superlattice structure in each V-shaped pit block dislocation in the corresponding V-shaped pit and stop the dislocation from continuing extending upwards, dislocation is effectively reduced, nonradiative recombination is lowered, electric leakage is reduced, ESD is improved, and light-emitting efficiency and intensity are improved; by means of the mixed local area quantum state formed by the In quantum dots / InN quantum dots between the two superlattice structures, the quantum effect of the quantum well is improved, and light-emitting efficiency and intensity are further improved.

Description

technical field [0001] The invention relates to the field of semiconductor optoelectronic devices, in particular to a nitride light-emitting diode. Background technique [0002] Nowadays, light-emitting diodes (LEDs), especially nitride light-emitting diodes, have been widely used in the field of general lighting due to their high luminous efficiency. Because there are defects in the bottom layer of nitride light-emitting diodes, when growing quantum wells, the defects will extend to form V-shaped pits and form non-radiative recombination centers, resulting in electrons easily leaking through the leakage channels of V-shaped pits, forming leakage and non-radiative recombination, and reducing luminescence Strength and ESD. Contents of the invention [0003] The object of the present invention is to provide a nitride light-emitting diode by depositing the first AlN / Al in V-shaped pits in the multi-quantum well region. x Ga 1-x N superlattice, local quantum state formed by...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/04H01L33/14H01L33/32H01L33/12
CPCH01L33/04H01L33/12H01L33/14H01L33/32
Inventor 郑锦坚李志明钟志白杨焕荣廖树涛杜伟华伍明跃周启伦林峰李水清康俊勇
Owner XIAMEN SANAN OPTOELECTRONICS TECH CO LTD
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