Light-emitting diode and method of making the same

Abstract

The invention provides a light-emitting diode and a manufacturing method thereof, the structure comprising: a light-emitting epitaxial stack, including a first-type semiconductor layer, an active layer, and a second-type semiconductor layer, with opposite first and second surfaces, Wherein the first surface is the light-emitting surface; the conductive layer is formed on the second surface of the light-emitting epitaxial stack, including a physical coating layer and an chemical coating layer, wherein the physical coating layer is adjacent to the light-emitting epitaxial stack and has cracks, The chemical coating layer fills the cracks in the physical coating layer; the substrate is connected to the light-emitting epitaxial stack through the conductive layer. The invention utilizes the combination method of vacuum evaporation and electroless coating to form a conductive layer, thereby filling the gaps generated by the vacuum evaporation process with metal, increasing the current conduction area, reducing voltage, and improving ESD performance.

Description

technical field [0001] The invention relates to the field of semiconductor optoelectronic devices, in particular to a light emitting diode and a manufacturing method thereof. Background technique [0002] Conductor light-emitting diodes have been widely used because of their small size, low power consumption, long life, energy saving and environmental protection. With the maturity of metal-organic chemical vapor deposition (MOCVD) epitaxial growth technology, (Al x Ga 1-x ) 0.5 In 0.5 LEDs with P material as the active region have high internal quantum efficiency. For LEDs, the focus of research is to improve the light extraction efficiency of the device through device structure design. [0003] Please see figure 1 , a light-emitting diode 100 using a transfer substrate, including from bottom to top: a conductive substrate 110, a conductive layer 120, a light-emitting epitaxial stack 130 composed of a p-type semiconductor layer 131 and an n-type semiconductor layer 132,...

AI Technical Summary

Problems solved by technology

However, vacuum evaporation is anisotropic and can only be deposited vertically upward, so when vacuum evaporating the conductive layer 120, gaps 122 will appear on the edge of the evaporation material, such as figure 2 As shown, the current expansion area becomes smaller, which affects VF and ESD conditions

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