Calcination removal technology of carbon impurities in silicon carbide micro-powder

A technology of silicon carbide micropowder and carbon impurities, which is applied in the field of silicon carbide impurity removal, can solve the problems affecting the physical and chemical properties of SiC, and the application cannot reach the theoretical limit, etc., and achieve the effect of good carbon removal effect, low cost and easy operation

Inactive Publication Date: 2016-08-24
任海涛
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, as a special functional material, SiC has great applications in semiconductors and electronics, and has relatively strict requirements in terms of purity. Due to silicon dioxide, graphite, free silicon, amorphous carbon and iron, aluminum, magnesium, calcium and other metals or The existence of metal oxide impurities affects the full play of the unique physical and chemical properties of SiC. Due to the existence of impurities in SiC, its application in many aspects cannot reach the theoretical limit.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] The calcination and removal process of carbon impurities in the silicon carbide micropowder of Example 1 includes the following steps:

[0017] S1: Load the silicon carbide micropowder into the magnetic boat, and use a tubular heat treatment furnace at 600 to 1200 ° C to keep calcined for 1 to 5 hours;

[0018] S2: cooling the product obtained from S1, pickling, and obtaining a solid product through multiple ultrasonic vibrations and centrifugation;

[0019] S3: drying the solid product in a drying oven to obtain the silicon carbide micropowder after removal of impurities.

[0020] Among them, the calcination temperature of the tubular heat treatment furnace in S1 is 900°C.

[0021] Among them, the heat preservation calcination time in S1 is 3h.

[0022] Wherein, the treatment solution of the pickling is a hydrochloric acid solution.

[0023] Wherein, the treatment liquid for ultrasonic vibration is a mixed liquid of water and acetone, and the weight percentage of wa...

Embodiment 2

[0025] The calcination and removal process of carbon impurities in the silicon carbide micropowder of embodiment 2 comprises the following steps:

[0026] S1: Load the silicon carbide micropowder into the magnetic boat, and use a tubular heat treatment furnace at 600 to 1200 ° C to keep calcined for 1 to 5 hours;

[0027] S2: cooling the product obtained from S1, pickling, and obtaining a solid product through multiple ultrasonic vibrations and centrifugation;

[0028] S3: drying the solid product in a drying oven to obtain the silicon carbide micropowder after removal of impurities.

[0029] Among them, the calcination temperature of the tubular heat treatment furnace in S1 is 925°C.

[0030] Among them, the heat preservation calcination time in S1 is 3.15h.

[0031] Wherein, the treatment solution of the pickling is a hydrochloric acid solution.

[0032] Wherein, the treatment liquid of ultrasonic vibration is a mixed liquid of water and acetone, and the weight percentage...

Embodiment 3

[0034] The calcination and removal process of carbon impurities in the silicon carbide micropowder of embodiment 3 comprises the following steps:

[0035] S1: Load the silicon carbide micropowder into the magnetic boat, and use a tubular heat treatment furnace at 600 to 1200 ° C to keep calcined for 1 to 5 hours;

[0036] S2: cooling the product obtained from S1, pickling, and obtaining a solid product through multiple ultrasonic vibrations and centrifugation;

[0037] S3: drying the solid product in a drying oven to obtain the silicon carbide micropowder after removal of impurities.

[0038] Among them, the calcination temperature of the tubular heat treatment furnace in S1 is 950°C.

[0039] Among them, the heat preservation calcination time in S1 is 3.3h.

[0040] Wherein, the treatment solution of the pickling is a hydrochloric acid solution.

[0041] Wherein, the treatment liquid of ultrasonic vibration is a mixed liquid of water and acetone, and the weight percentage ...

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PUM

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Abstract

The invention discloses a calcination removal technology of carbon impurities in silicon carbide micro-powder. The technology comprises the steps such as calcination, acid washing and drying. Static calcination carbon removal has the advantages of low cost, easiness in operation and good carbon removal effect, can effectively control the oxidation of SiC and achieves an aim of removing carbon impurities in micro-powder; and the silicon carbide after carbon removal meets the requirement on the carbon impurity content of SiC application in terms of semiconductor electronics and the like.

Description

technical field [0001] The invention relates to the field of silicon carbide impurity removal, in particular to a process for calcining and removing carbon impurities in silicon carbide micropowder. Background technique [0002] Silicon carbide is a man-made material. The two elements in SiC belong to the IVA group in the periodic table. It has the largest electron affinity and is the most active non-metal. In its crystal structure, each silicon atom is surrounded by four adjacent elements. Surrounded by carbon atoms, they are all four vertices of the tetrahedron. The carbon atoms and the silicon atoms are bonded by sp3 bonds to form SiC with a diamond crystal structure. There are strong covalent bonds, so SiC is C and Si The only stable compound. The difference between the electronegativities of carbon and silicon atoms shows that the ionic bond in SiC accounts for about 12%, which shows that its covalent bond is quite strong. The structure determines that SiC crystal has...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/36
Inventor 任海涛
Owner 任海涛
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