Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A kind of organic photoelectric material containing indenophenanthroline structure and its preparation method and application

An organic photoelectric material, indenophenanthroline technology, applied in the direction of luminescent materials, organic chemistry, chemical instruments and methods, etc., can solve the problems of rare electron transport materials, achieve good industrialization prospects, improve life expectancy, reduce The effect of drive voltage

Active Publication Date: 2018-04-03
VALIANT CO LTD
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Although there are many electron transport materials for organic light-emitting devices, there are not many electron transport materials that can meet the above conditions.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of organic photoelectric material containing indenophenanthroline structure and its preparation method and application
  • A kind of organic photoelectric material containing indenophenanthroline structure and its preparation method and application
  • A kind of organic photoelectric material containing indenophenanthroline structure and its preparation method and application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0077] Example 1: Preparation of the aforementioned compound E01

[0078] Preparation of intermediate one (a):

[0079]

[0080] At -78°C and under the protection of nitrogen, take 67.6g of 4,7-dibromophenanthroline (200.0mmol) and disperse it in 500g of tetrahydrofuran, then add dropwise 176mL of 2.5mol / L containing n-butyl Lithium n-hexane solution, after the dropwise addition, keep it warm for 2.0 hours, then add 33.0g of trimethylchlorosilane dropwise at -78°C, keep it warm for 2.0 hours after the drop, and then slowly warm the reaction system to room temperature , then poured the system into 200g of water, stirred and reacted for 30min, then added 500g of ethyl acetate for extraction, the system was layered, washed with water, and finally the organic phase was desolvated under reduced pressure until there was no fraction, and 64.7g of intermediate- (a), without further purification.

[0081] Preparation of intermediate one (b):

[0082]

[0083] At -78°C and unde...

Embodiment 2

[0103] Example 2: Preparation of the aforementioned compound E26

[0104] The preparation of intermediate two (a):

[0105]

[0106]At -78°C and under the protection of nitrogen, 52.1 g of 4-bromodibenzofuran (211.0 mmol) was dispersed in 400 g of tetrahydrofuran, and then 93 mL of n-butyllithium containing 2.5 mol / L was added dropwise. After the addition of the n-hexane solution is complete, keep it warm for 2.0 hours, and then slowly raise the temperature to -10°C for storage until use.

[0107] Take 32.5g of intermediate one (c) (100.0mmol) and dissolve it in 300g of tetrahydrofuran, add the above-mentioned phenyllithium solution dropwise at -10°C, keep the reaction for 2.0 hours after dropping, and then slowly raise the temperature of the reaction system to room temperature , and then poured the system into 200g of water, stirred and reacted for 30min, then added 500g of dichloromethane for extraction, the system was layered, washed with water, and dried over anhydrous...

Embodiment 3

[0126] Example 3: Preparation of the aforementioned compound E38

[0127] Preparation of intermediate three (a):

[0128]

[0129] At -78°C and under the protection of nitrogen, take 16.6g of bromobenzene (105.0mmol) and disperse it in 150g of tetrahydrofuran, then add dropwise 47mL of n-hexane solution containing n-butyllithium with a concentration of 2.5mol / L, dropwise After the addition, keep the reaction for 2.0 hours, and then slowly raise the temperature to -10°C for storage until use.

[0130] Take 24.5g of intermediate bis(a) (50.0mmol) and dissolve it in 120g of tetrahydrofuran, add the above-mentioned phenyllithium solution dropwise at -10°C, keep the reaction for 2.0 hours after dropping, and then slowly raise the temperature of the reaction system to room temperature , and then poured the system into 150g of water, stirred and reacted for 30min, then added 300g of dichloromethane for extraction, the system was layered, washed with water, and dried over anhydrou...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses an organic photoelectric material containing an indenophenanthroline structure, a preparation method and application thereof, and belongs to the technical field of organic photoelectric materials. It has the molecular structure shown in Formula 1: wherein, R1 is phenyl or dibenzofuryl, R2 is one of hydrogen, phenyl or dibenzofuryl, R3 is hydrogen, phenyl, and the number of carbon atoms is One of 10-60 polycyclic conjugated aryl groups and aromatic heterocyclic groups containing N, S, and O atoms. Because the material of the invention contains an indeno-phenanthroline structure, it forms a larger rigid planar structure, provides high electron mobility and large electron affinity, and greatly improves the transmission of injected electrons.

Description

technical field [0001] The invention relates to an organic photoelectric material containing an indenophenanthroline structure and a preparation method and application thereof, belonging to the technical field of organic photoelectric materials. Background technique [0002] In recent years, organic light emitting diodes (organic light emitting diode, OLED) have become a very popular emerging flat-panel display at home and abroad, because OLED displays have self-illumination, wide viewing angle (up to 175°C or more), short response time, high luminous efficiency, Wide color gamut, low operating voltage (3-10V), thin panel, large-size and flexible panel can be produced, and simple manufacturing process, and it has the potential of low cost. It is considered to be the star of the next generation of ultra-thin flat panel display devices. Although many research institutions and companies around the world have invested a lot of energy in the research and development of organic e...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C07D471/04C07D519/00C09K11/06H01L51/50H01L51/54
CPCC09K11/06C07D471/04C07D519/00C09K2211/1088C09K2211/1092C09K2211/1029C09K2211/1033C09K2211/1044C09K2211/1011H10K85/615H10K85/6576H10K85/6574H10K85/657H10K85/6572H10K50/00
Inventor 林存生孙晟源张善国付文岗胡葆华许琰
Owner VALIANT CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com