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Method of preparing oxide/metal magnetic heterojunction through atomic layer deposition

An atomic layer deposition method and atomic layer deposition technology, applied in the direction of metal material coating process, coating, gaseous chemical plating, etc., can solve the problem of inability to obtain thin films of thickness and composition height, hindering realization, and impossible to achieve thin films. And other issues

Active Publication Date: 2016-09-07
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since these methods are carried out at high temperature either during the deposition process or during the annealing process, the preparation of Fe on flexible polymer substrates 3 o 4 thin film impossible
In addition, with the continuous improvement of performance requirements, it is necessary to prepare a thin film with a thickness of several nanometers on the surface of a three-dimensional structure (such as a trench with a large aspect ratio, a 3D fin structure, etc.), and the above-mentioned methods are limited by the deposition principle. It cannot produce thin films with highly controllable thickness and composition on the surface of complex three-dimensional structures, which hinders the realization of practical applications

Method used

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  • Method of preparing oxide/metal magnetic heterojunction through atomic layer deposition
  • Method of preparing oxide/metal magnetic heterojunction through atomic layer deposition
  • Method of preparing oxide/metal magnetic heterojunction through atomic layer deposition

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] 1), Substrate pretreatment: the Cu substrate required for the experiment is concentrated H at a volume ratio of 2 SO 4 :H 2 o 2 = 1:1 wash solution for 3 minutes, then take the substrate out of the wash solution, rinse with a large amount of deionized water and blow dry with high-purity nitrogen for later use;

[0030] 2) Using ferrocene as the iron source and oxygen as the oxygen source to deposit ferric oxide film. Put the ferrocene into the special solid-state source cylinder of the atomic layer deposition system and heat it to 150°C, and connect the oxygen to the reaction chamber of the atomic layer deposition system through a special pipeline for standby. Before starting the deposition, pre-exhaust the ferrocene source steel cylinder to eliminate the air mixed in the source loading process, and ensure the stability of the ferrocene source pulse and not be oxidized and decomposed during the heating process;

[0031] 3) Send the metal substrate pretreated in step 1...

Embodiment 2

[0035] 1), Substrate preparation: the Ni substrate required for the experiment is concentrated H in the volume ratio 2 SO 4 :H 2 o 2 =3:1 washing solution for 5 minutes, then the substrate was taken out from the washing solution, rinsed with a large amount of deionized water and blown dry with nitrogen for later use;

[0036] 2) Using ferrocene as the iron source and oxygen as the oxygen source to deposit ferric oxide film. Put the ferrocene into the special solid-state source cylinder of the atomic layer deposition system and heat it to 160°C, and connect the oxygen to the reaction chamber of the atomic deposition system through a special pipeline for standby. Before starting the deposition, pre-exhaust the ferrocene source steel cylinder to eliminate the air mixed in the source loading process, and ensure the stability of the ferrocene source pulse and not be oxidized and decomposed during the heating process;

[0037] 3) Send the substrate pretreated in step 1) into the...

Embodiment 3

[0041] 1) Substrate preparation: prepare the Al substrate required for the experiment at a volume ratio of concentrated H 2 SO 4 :H 2 o 2 =5:1 wash solution for 10 minutes, then the substrate was taken out from the wash solution, rinsed with a large amount of deionized water and dried with nitrogen gas for later use;

[0042] 2) Using ferrocene as the iron source and oxygen as the oxygen source to deposit ferric oxide. Put the ferrocene into the special solid-state source cylinder of the atomic layer deposition system and heat it to 165°C, and connect the oxygen to the reaction chamber of the atomic deposition system through a special pipeline for standby. Pre-exhaust the ferrocene source steel cylinder before starting the deposition to eliminate the air mixed in the source loading process, and ensure that the ferrocene source pulse is stable and will not be oxidized and decomposed during the heating process;

[0043] 3) Send the substrate pretreated in step 1) into the re...

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Abstract

The invention provides a method of preparing an oxide / metal magnetic heterojunction through atomic layer deposition. According to the method, ferroferric oxide is deposited on metal substrates by using ferrocene as an iron source and oxygen as an oxygen source through atomic layer deposition, and the ferroferric and the oxygen are alternately led into a reaction cavity of the atomic layer deposition system through the atomic layer deposition system, thereby realizing the deposition of the ferroferric oxide on the different metal substrates, and further constructing the oxide / metal magnetic heterojunction. The oxide / metal magnetic heterojunction prepared by using the method has the advantages of low cost, controllable components and thickness accuracy of a thin film, uniform three dimensions, good shape preservation and the like and can serve as a key device for regulation and control of magnetoelectric coupling.

Description

technical field [0001] The invention belongs to the field of electronic thin film materials and devices, and relates to a method for preparing an oxide / metal magnetic heterojunction by atomic layer deposition (ALD). Background technique [0002] With the continuous development of science and technology, the size of electronic products is getting smaller and smaller, and the storage density and operating speed of traditional devices are getting closer and closer to their physical limits. Consider electron spin. Spintronics is a subject that studies electronic devices based on the spin-polarized transport properties of electrons. As a new subject, its development still faces many challenges. Ferric oxide (Fe 3 o 4 ) is an important 3d transition metal compound, and its electron spin polarizability is very high. It is one of the materials that may realize industrial application in spintronics. Common growth methods of Fe3O4 thin films include: pulsed laser deposition (pulse...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/40C23C16/455C23C16/02
CPCC23C16/0227C23C16/406C23C16/45525
Inventor 刘明张乐任巍张易军
Owner XI AN JIAOTONG UNIV
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