ZnS nanobelt/CdS nanorod heterojunction synthetic method

Abstract

The invention discloses a ZnS nanobelt / CdS nanorod heterojunction synthetic method, and the method is characterized in that the method comprises the following steps: firstly depositing a gold film on a silicon substrate through employing an ion sputtering instrument, putting ZnS powder into a ceramic boat, and placing the ceramic boat at the position of a pipe-type thermocouple; secondly placing the silicon substrate in a downwind direction of the ZnS powder, letting in argon gas, increasing the reaction temperature to 900+ / -20 DEG C under the protection of the argon gas, and carrying out reaction for 2+ / -0.5h under the temperature, wherein a white sample can be seen on the silicon substrate after the reaction; finally opening a device, placing the CdS powder at the position of the thermocouple, placing the white sample at a downwind port of the ZnS powder, increasing the reaction temperature to 800+ / -20 DEG C under the protection of the argon gas, carrying out reaction for 1+ / -0.3h at the temperature under the protection of argon gas, decreasing the temperature to the indoor temperature after the reaction is completed, and obtaining a flaxen sample on the silicon substrate.

Description

technical field

[0001] The invention is a method for synthesizing II-VI semiconductor heterojunction materials (ZnS nanobelt / CdS nanocolumn heterojunction). Background technique

[0002] II-VI compound semiconductors have been playing an important role in lasers, light-emitting diodes, solar cells and other applications due to their remarkable characteristics such as wide bandgap range, direct transition type energy band structure and rich luminescent colors. Nano-scale II-VI semiconductor materials show great application potential in the field of nano-optoelectronic devices because of their unique luminescent properties, semiconductor quantization performance and better meeting the needs of device miniaturization. Therefore, research on the synthesis, optoelectronic properties and applications of II-VI semiconductor nanomaterials has attracted people's attention in recent years. ZnS and CdS are representative II-VI semiconductor materials, and the research on these two nan...

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