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Silicon carbide crystal ingot, silicon carbide wafer, and method for manufacturing silicon carbide crystal ingot and silicon carbide wafer

A silicon carbide and crystal ingot technology, which is applied to silicon carbide, chemical instruments and methods, carbides, etc., can solve the problem of difficult to infer the manufacturing process of silicon carbide crystal ingots and wafers, and achieve the effect of improving performance.

Inactive Publication Date: 2016-09-14
KYOCERA CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

As a result, when there are defects in silicon carbide ingots and wafers, it may be difficult to estimate defects in the manufacturing process of silicon carbide ingots and wafers

Method used

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  • Silicon carbide crystal ingot, silicon carbide wafer, and method for manufacturing silicon carbide crystal ingot and silicon carbide wafer
  • Silicon carbide crystal ingot, silicon carbide wafer, and method for manufacturing silicon carbide crystal ingot and silicon carbide wafer
  • Silicon carbide crystal ingot, silicon carbide wafer, and method for manufacturing silicon carbide crystal ingot and silicon carbide wafer

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Embodiment Construction

[0021]

[0022] Below, refer to Figure 1 to Figure 6 A silicon carbide ingot according to one embodiment of the present invention will be described. In addition, this invention is not limited to this embodiment, Various changes and improvements can be added in the range which does not deviate from the summary of this invention.

[0023] figure 1 It is a schematic side view showing a silicon carbide ingot in one embodiment of the present invention. figure 2 will be figure 1 The illustrated ingot is an enlarged part of the cross-section obtained by cutting in the vertical direction (Z-axis direction), and is a cross-sectional view showing the concentration of the donor or acceptor in the ingot and the color of the ingot. image 3 will be figure 2 A portion of the cross-section of the ingot shown is further enlarged, showing the concentration of donor or acceptor within the ingot and the cross-sectional view of the ingot color. Figure 4 is the same as figure 1 Schemat...

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Abstract

The silicon carbide crystal ingot (1) pertaining to an embodiment of the present invention is provided with a plurality of first crystal layers (3) and a plurality of second crystal layers (4) arranged in alternating fashion and each including donors or acceptors, respectively, and the concentration of donors or acceptors in each second crystal layer (4) is higher than the concentration of donors or acceptors in the first crystal layer (3) above or below and adjacent thereto.

Description

technical field [0001] The invention relates to a method for manufacturing a silicon carbide crystal ingot, a silicon carbide wafer, a silicon carbide crystal ingot and a silicon carbide wafer. Background technique [0002] Silicon carbide (SiC) is currently attracting attention as a substrate material for electronic components. For example, Japanese Patent Application Laid-Open No. 2012-136391 describes a method for manufacturing a silicon carbide ingot and a silicon carbide wafer for forming an electronic device substrate. [0003] In such methods of manufacturing silicon carbide ingots and silicon carbide wafers, it is desired to produce high-purity silicon carbide crystals. [0004] However, only when silicon carbide crystals are formed with high purity, for example, there are few donors or acceptors in a wafer for forming an electronic device substrate, and the resistance of the substrate increases. As a result, the performance of electronic components may be degraded...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/36
CPCC30B29/36C30B15/04C01B32/956C01B32/984C30B7/005H01L29/1608
Inventor 堂本千秋正木克明柴田和也山口恵彥上山大辅
Owner KYOCERA CORP