Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Smart liquid for stripping photoresist

A photoresist and liquid technology, applied in the processing of photosensitive materials, non-ionic surface active compounds, anionic surface active compounds, etc., can solve the problems of high cost and complex free radical processing technology

Active Publication Date: 2020-04-14
智能液体有限公司
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0027] The complex machining process that generates free radicals, the necessary process control management and the distribution of materials also lead to high costs
[0028] Likewise, for metal liftoff, it is difficult to peel the coating from the substrate

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Smart liquid for stripping photoresist
  • Smart liquid for stripping photoresist
  • Smart liquid for stripping photoresist

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0090]

[0091]

Embodiment 2

[0093] raw material Weight fraction [wt%] softened water 39.45 diacetone alcohol 14.00 ethyl acetoacetate 25.00 Oil 3.00 2-phenylethanol 3.75 Alkyl ethoxylates 12.00 lauryl sulfate 2.80 Total 100.00％

[0094]

[0095]

[0096] All heterogeneous systems had turbidity in the range of greater than 0 to less than or equal to 200 NTU. Turbidity can be maintained in a wide temperature range from 10°C to 95°C. Turbidity can be easily measured using a nephelometer, for example, a Hach 2100 nephelometer well known to those skilled in the art.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention relates to a novel cleaning agent based on a multiphase system, the use of the cleaning agent for removing photoresist coatings from surfaces, and a method for removing photoresist coatings from surfaces. According to the invention, the multiphase system is particularly suitable for removing coatings, photoresist coatings, polymer layers, dirt layers, insulating layers and metal layers from surfaces.

Description

technical field [0001] The present invention describes novel cleaners based on multiphase systems, the use of the cleaners for removing photoresist coatings from surfaces and methods for removing photoresist coatings from surfaces. Background technique [0002] The multiphase system according to the invention is particularly suitable for removing coatings, photoresist coatings, polymer layers, dirt layers, insulating layers and metal layers from surfaces. [0003] Manufacturing silicon wafers starts with a disk-shaped wafer made from a single crystal of silicon. The wafer is approximately 1mm thick. Circuits, wires, and electronic components are layered from these wafers. Depending on the specific product desired, the manufacturing process requires hundreds of processing steps, with some steps repeated multiple times. [0004] In order to coat the silicon surface of the wafer with the desired structure, the surface is first oxidized with steam. The oxide layer structures...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C11D17/00C11D11/00C11D3/20C11D3/32
CPCC11D3/2041C11D3/2072C11D3/2093C11D3/32C11D17/0013C11D2111/22C11D1/02C11D1/38C11D1/66C11D1/88G03F7/42C11D1/146C11D1/75C11D1/83C11D3/2044C11D3/2075C11D17/0017H01L21/0272H01L21/31058H01L21/321
Inventor D·舒曼
Owner 智能液体有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com