Treatment method of MOCVD reactor

Abstract

The invention provides a treatment method of a MOCVD reactor. According to the treatment method, a metal organic gas reaction is cyclically performed in a pretreatment stage. The treatment method comprises a pretreatment procedure and a crystal growth procedure, wherein the pretreatment procedure comprises a metal organic gas reaction step and an oxygen-containing gas reaction step which are alternately performed until the pretreatment on a spray header in a reaction cavity is finished; in the pretreatment procedure, the spray header is controlled to has first temperature by controlling a cooling liquid control system; in the crystal growth procedure, the spray header has second temperature; and the first temperature is higher than the second temperature.

Description

technical field [0001] The invention relates to the technical field of chemical vapor deposition of metal organic compounds, in particular to a method for treating metal chemical vapor deposition reactors. Background technique [0002] like figure 1 As shown, the metal-organic chemical vapor deposition (MOCVD) reactor includes a reaction chamber 100, including a tray 14 in the reaction chamber, and a plurality of substrates to be processed are fixed on the tray, and there is a rotating shaft 10 in the center below the tray 14 to drive the tray Rotate at high speed during the reaction. The rotating shaft 10 may also be a gas bearing device, such as a barrel-shaped structure supporting the tray 14 on the periphery of the wafer tray. A heater 12 is also included under the tray 14 to heat the tray 14 to a suitable high temperature, which is usually about 1000 degrees, so as to be suitable for the crystal growth of gallium nitride (GaN) crystal material. Opposite to the tray i...

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Problems solved by technology

[0004] The problem solved by the present invention is to prevent the gas shower head material in the MOCVD reactor from causing the contamination of the wafer to be processed below. In order to solve this problem, the present invention proposes a processing method for the MOCVD reactor, including: providing a reactor , the reactor includes a reaction chamber, a gas shower head is fixed on the top of the reaction chamber, the gas shower head includes a gas distributor and a cooling plate located below the gas distributor, and the cooling plate includes multiple The strip cooling pipes are connected to the external cooling liquid supply system to control the temperature of the cooling plate, a suction device is arranged at the bottom of the reaction chamber to discharge the gas in the reaction chamber, a support device is used to support the wafer tray to be processed, and a The heating device is located below the wafer tray; the treatment method includes a pretreatment process and a crystal growth process, wherein the pretreatment process includes a metal-organic gas reaction step and an oxygen-containing gas reaction step, and in the metal-organic gas reaction step, placing the wafer tray on the supporting device, controlling the cooling liquid supply system so that the gas shower head has a first temperature, supplying the first power to the heating device, and introducing a first metal organic reaction gas into the reaction chamber , until the metal-organic gas reaction step is completed; in the oxygen-containing gas reaction step, stop supplying the first metal-organic reaction gas, and supply oxygen-containing gas to the reaction chamber at the same time, until the oxygen-containing gas reaction step is completed; execute the steps in a loop The metal-organic gas reaction step and the oxygen-containing gas reaction step are described until the pretreatment process is completed and the crystal growth process is entered; in the crystal growth process, a tray carrying a wafer to be processed is placed on the support device, and the cooling liquid is controlled The supply system makes the gas shower head have a second temperature, supplies the second power to the heater, and passes the second metal-organic reaction gas into the reaction chamber; it is characterized in that the first temperature is greater than the second temperature, and the first power is less than second power

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