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A kind of conductive thin film manufacturing method and conductive thin film

A manufacturing method and technology of conductive film, which are applied in the direction of cable/conductor manufacturing, conductive layer on insulating carrier, circuit, etc., can solve the problems affecting the performance of MEMS microphone, thickness and stress that do not meet requirements, etc.

Active Publication Date: 2017-11-10
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, if the thickness and stress of the Cr / Au composite film often do not meet the requirements, thus affecting the performance of the MEMS microphone

Method used

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  • A kind of conductive thin film manufacturing method and conductive thin film
  • A kind of conductive thin film manufacturing method and conductive thin film
  • A kind of conductive thin film manufacturing method and conductive thin film

Examples

Experimental program
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Embodiment 1

[0039] Combine below Figure 2A ~ Figure 2C A method for fabricating a metal thin film according to an embodiment of the present invention is described in detail.

[0040] In this embodiment, a PVD machine that can install targets of up to 4 materials in one process chamber and process 6 wafers at the same time is used, so both Cr and Au targets are installed in this machine , the deposition of the entire sandwich structure can be completed in the same chamber, the specific process is:

[0041] First, if Figure 2A As shown, a substrate 200 is provided, and an adhesive layer 201 is formed on the substrate 200 .

[0042] The substrate 200 plays a supporting role, and a silicon nitride film or a silicon dioxide film with a suitable thickness can be used, and the substrate 200 can be formed on a suitable wafer. Adhesive layer 201 plays a role in improving the deposition performance and facilitates the deposition of the subsequent conductive film. It can be selected from materi...

Embodiment 2

[0051] The present invention also provides a conductive thin film 100 made by the method described in Embodiment 1, which includes a substrate 300, an adhesive layer 301 on the substrate 300, and alternately formed gold thin film layers on the adhesive layer 301 ( 302, 304, 306) and isolation layers (303, 305), wherein the gold thin film layer (302, 304, 306) is formed by physical vapor deposition, and the gold thin film layer is obtained by controlling the process parameters of physical vapor deposition The required stress, the process parameters include one or more of radio frequency power, air flow rate and tray rotation speed.

[0052] In this implementation, the substrate 300 is made of silicon nitride or silicon oxide, which plays the role of supporting the conductive film, and the adhesive layer 301 plays the role of facilitating the deposition of the metal film layer. The cr layer is used as the adhesive layer, and of course other material layers with appropriate thic...

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Abstract

The invention provides a method for making a conductive film, which is used to form a gold-containing conductive film with a thickness larger than A gold thin film layer of a certain thickness is formed on the bonding layer by physical vapor deposition; S3: form an isolation layer on the gold thin film layer; repeat the steps S2 and S3 to alternately form a gold thin film layer and an isolation layer, and then obtain the desired Thick conductive thin film, wherein, when forming a gold thin film layer with a certain thickness by physical vapor deposition, the gold thin film layer can obtain the required stress by controlling the process parameters of physical vapor deposition. The manufacturing method of the conductive thin film proposed by the invention can form a Cr / Au thin film meeting the thickness and stress requirements.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for manufacturing a conductive film and the conductive film. Background technique [0002] Pure gold (Au) film is a typical conductive film, which is widely used due to its unique combination of electrical and thermal conductivity and high oxidation resistance, especially in the semiconductor and microelectromechanical systems (MEMS) industries. However, its mechanical properties are often unsatisfactory. For this purpose, a new Cr / Au composite layer film application was born, which is often used as a conductive material. However, in many applications, there are certain requirements for film thickness and stress, such as MEMS microphones using micro-electromechanical system technology. [0003] Due to its miniaturization and lightness, this microphone becomes one of the best candidates to replace the electret condenser microphone (ECM) using an organic film. MEM...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01B13/00H01B5/14
Inventor 沈哲敏李广宁
Owner SEMICON MFG INT (SHANGHAI) CORP
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