Chemical quartz separation treatment method for broken-particle monocrystalline silicon pot bottom material

Abstract

The chemical quartz detachment treatment method for the broken granular material at the bottom of the monocrystalline silicon pot involves the technology of solar silicon material washing. Put it into a pp soaking flower basket; b take NaOH caustic soda and dissolve it with tap water, and control the concentration of the lye within 15%; c add the prepared NaOH solution to a semi-automatic constant temperature cleaning machine for heating, and control the temperature of the lye at 70-80°C , put the flower basket containing the scraps at the bottom of the monocrystalline silicon crucible into the alkali solution, stir evenly with a tetrafluoro rod for 20-25 minutes, and then soak and rinse with water; d Use a centrifuge and an oven to dehydrate and dry it, Silicon material and quartz can be separated. Beneficial effects of the present invention: the separation of quartz and silicon material in the bottom material of the single crystal silicon crucible is realized by using the principle of heterosexual corrosion of silicon by NaOH solution, and this technology has the advantages of high separation efficiency, low cost, and little environmental pollution; thereby reducing purpose of this enhancement.

Description

technical field [0001] The invention relates to the technical field of manufacturing solar single and polycrystalline silicon wafers, and further relates to the washing technology of single crystal silicon crucible bottom material, especially the chemical quartz detachment treatment method for broken granular material at the bottom of single crystal silicon crucible. Background technique [0002] With the promotion of diamond wire cutting technology in the field of single crystal, the single crystal market is bound to recover. For the production of silicon rods by the Czochralski method for single crystal silicon, some residual materials will remain in the crucible, and there will be a white quartz crucible after being broken. Attached to the silicon material, these silicon materials with quartz attached are waste silicon materials produced in the photovoltaic industry; Silicon materials can continue to be used in ingot production; the current common method is to separate si...

AI Technical Summary

Problems solved by technology

[0002] With the promotion of diamond wire cutting technology in the field of single crystal, the single crystal market is bound to recover. For the production of silicon rods by the Czochralski method for single crystal silicon, some residual materials will remain in the crucible, and there will be a white quartz crucible after being broken. Attached to the silicon material, these silicon materials with quartz attached are waste silicon materials produced in the photovoltaic industry; Silicon materials can continue to be used in ingot production; the current common method is to separate silicon materials from quartz by physical knocking; in production, there will be some crucible bottom materials that cannot be separated by physical knocking, and hydrofluoric acid is commonly used in the market at room temperature. Under soaking, it usually takes 2-3 days to separate a small part of the silicon material from the quartz. The production efficiency is low, the cost is high, and the environmental pollution is serious. The labor cost input is also relatively high