Seed crystal shaft and method for liquid phase growth of silicon carbide
A liquid phase growth and silicon carbide technology, applied in chemical instruments and methods, single crystal growth, single crystal growth, etc., to achieve the effect of ensuring crystal quality and growth speed
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Embodiment 1
[0018] A seed crystal axis for liquid-phase growth of silicon carbide, comprising a graphite axis 1, a graphite axis cap 2 is connected to the lower end of the graphite axis 1; the graphite axis cap 2 is a hollow structure;
[0019] The graphite shaft cap 2 is connected to the graphite shaft 1 through threads.
[0020] Using the above-mentioned method for growing silicon carbide on a seed crystal axis in liquid phase, during the growth process of silicon carbide, an inert gas is introduced into the growth chamber.
[0021] The inert gas is helium.
[0022] A temperature measuring hole 3 is provided in the middle of the graphite shaft 1 .
[0023] In order to further increase heat dissipation, the height of graphite shaft cap 2 is 10cm.
Embodiment 2
[0025] A seed crystal axis for liquid-phase growth of silicon carbide, comprising a graphite axis 1, a graphite axis cap 2 is connected to the lower end of the graphite axis 1; the graphite axis cap 2 is a hollow structure;
[0026] The graphite shaft cap 2 is connected with the graphite shaft 1 through a buckle.
[0027] Using the above-mentioned method for growing silicon carbide on a seed crystal axis in liquid phase, during the growth process of silicon carbide, an inert gas is introduced into the growth chamber.
[0028] The inert gas is helium.
[0029] A temperature measuring hole 3 is provided in the middle of the graphite shaft 1 .
[0030] In order to further increase heat dissipation, the height of graphite shaft cap 2 is 5cm.
Embodiment 3
[0032] A seed crystal axis for liquid-phase growth of silicon carbide, comprising a graphite axis 1, a graphite axis cap 2 is connected to the lower end of the graphite axis 1; the graphite axis cap 2 is a hollow structure;
[0033] The graphite shaft cap 2 is connected to the graphite shaft 1 through threads.
[0034] A temperature measuring hole 3 is provided in the middle of the graphite shaft 1 .
[0035] Using the above-mentioned method for growing silicon carbide on a seed crystal axis in liquid phase, during the growth process of silicon carbide, an inert gas is introduced into the growth chamber.
[0036] The inert gas is argon.
[0037] The graphite shaft cap 2 has a height of 1 cm.
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Abstract
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Application Information
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