Crystal annealing device in growth furnace

Abstract

The invention relates to a crystal annealing device in a growth furnace. The heating power of a heat chromium-aluminum high-temperature heating wire which is wound on an inner layer and an outer layer of heat insulating covers is adjusted by measuring the temperatures of two double platinum-rhodium thermocouples, and a heating source is provided; and an annealing space with the relatively small temperature gradient is formed in the upper heat insulating cover, and then the temperature gradients on a head part and a tail part of the crystal are smaller, so that an inner thermal stress of the crystal can be reduced. By using the method, the high-temperature crystal with the low internal stress can be grown, the crystal can be directly oriented and cut after annealing of crystal growth and crystal elements with all kinds of specifications are prepared without long-time annealing outside the furnace, so that the internal stress of the crystal is greatly reduced, the internal defects are reduced, the efficiency is greatly improved, and the device has simple structure and low manufacturing cost and is suitable for batch production.

Description

Technical field [0001] The invention belongs to the technical field of artificial crystal preparation, and particularly relates to the structure and principle of a crystal annealing device in a growth furnace. Background technique [0002] Growing crystals from pure melts is one of the most common crystal growth methods. The biggest advantage of pure melt crystal growth is a much higher growth rate than other methods. The second is that the grown crystals are relatively less impurity encapsulated, but the crystals grown by this method have higher thermal stress, dislocations and grain boundaries. More serious. [0003] High melting point functional crystals can be grown by pure melt pulling method, such as laser crystal yttrium iron garnet and scintillation crystal cerium-doped yttrium lutetium silicate, etc. The growth temperature of these crystals is generally around 2000 ℃. After the crystal growth is completed, the heating power needs to be gradually reduced and slowly drop t...

AI Technical Summary

Problems solved by technology

After the crystal growth is completed, follow-up annealing is carried out outside the furnace. Since the annealing temperature is difficult to be high (generally below 1300 degrees), the internal stress of the crystal and the defects caused by thermal stress cannot be completely released and released in the follow-up outside the furnace annealing. solve

At the same time, the additional out-of-furnace annealing also requires a longer annealing time

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