Reverse conduction lateral insulated gate bipolar transistor device for eliminating hysteresis

Abstract

A reverse conducting lateral insulated gate bipolar transistor device for eliminating a hysteresis phenomenon can eliminate the hysteresis phenomenon while increasing cutting off speed of a conventional structure. The semiconductor comprises buried oxide on a P-type substrate, an N-type drift region on the buried oxide, an N-type buffer region array and a P-type body region on two sides of the N-type drift region, heavily doped P-type collector regions in the N-type buffer regions of the N-type buffer region array, first N-type heavily doped regions between adjacent heavily doped P-type collector regions, a P-type well region in the P-type body region, a heavily doped P-type emitter electrode region in the P-type well region, a heavily doped N-type emitter region on the periphery of the heavily doped P-type emitter electrode region, and an oxide layer isolating groove in the N-type drift region. The boundaries of the groove and the device form an N-type drift region partial enclosing region, each first N-type heavily doped region is enclosed by the oxide layer isolating groove, and adjacent heavily doped P-type collector regions and N-type heavily doped region are isolated by the oxide layer isolating groove.

Description

technical field [0001] The invention mainly relates to the technical field of power semiconductor devices. It is a reverse conduction type transverse insulated gate bipolar transistor that eliminates the hysteresis phenomenon. It is especially suitable for high-voltage three-phase single-chip inverter integrated circuits to drive DC wireless Brush the motor. Background technique [0002] The insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT) is a compound semiconductor power device, which is equivalent to the combination of MOS gate device and power bipolar transistor in structure, and has the fast switching speed of MOS gate device in performance And the advantages of low conduction loss of power bipolar transistors greatly alleviate the application requirements of high frequency, low power consumption and high voltage and high current, and are widely used in household appliances, smart grids and transportation transmission fields. [0003] Reverse...

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Problems solved by technology

[0004] The hysteresis phenomenon will cause the device to have a large conduction voltage drop when it is just turned on, which increases the conduction loss of the device and increases the overall loss of the power module; not only that, the large voltage change caused by the hysteresis phenomenon rate can also cause problems with device stability, making the device prone to failure

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