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N-type back junction double-sided solar cell manufacturing method

A double-sided solar cell, n-type technology, applied in the field of solar cells, can solve problems such as parasitic absorption, and achieve the effects of improving cell efficiency, simple preparation method, and improving cell conversion efficiency

Active Publication Date: 2016-10-12
BEIJING UNIV OF TECH
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  • Application Information

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Problems solved by technology

[0005] The present invention aims to solve the problem of parasitic absorption in a-Si / c-Si heterojunction solar cells

Method used

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Embodiment 1

[0024] refer to figure 1 , figure 1 It is a flow chart of the preparation of the battery of the embodiment of the present invention.

[0025] (1) In step 101, with pure SiH 4 and H 2 Intrinsic amorphous silicon 202 is deposited on a clean single crystal silicon substrate 201 as a reaction gas, and then n-type amorphous silicon oxide 203 and n-type amorphous silicon 204 are sequentially deposited on the amorphous silicon 202, such as figure 2 shown. The conditions for VHF-PECVD preparation of intrinsic amorphous silicon are: the background vacuum is higher than 10 -3 Pa, substrate temperature 200°C, gas SiH 4 The flow rate is 15sccm, H 2 The flow rate is 20sccm, the pressure is 0.4mbar, and the deposition power is 50mW / cm 2 , the prepared intrinsic amorphous silicon buffer layer 202 has a thickness of 5-10 nm. The conditions for preparing n-type amorphous silicon oxide by VHF-PECVD are: the background vacuum is higher than 10 -3 Pa, substrate temperature 200°C, gas Si...

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Abstract

The invention discloses an n-type back junction double-sided solar cell manufacturing method, which belongs to the field of solar cells. Compared with the traditional silicon heterojunction solar cell, the n-type back junction double-sided solar cell adopts a back junction structure, that is, a pn junction is arranged on the back side of the cell, n-type amorphous silica is adopted to replace n-type amorphous silicon, and the short circuit current of the cell is greatly improved. An extremely-thin layer of heavily-doped n-type amorphous silicon is inserted between hydrogen-doped indium oxide and the n-type amorphous silica, and the contact features are further improved. Through the above points, the traditional silicon heterojunction cell structure is optimized, the cell conversion efficiency is obviously enhanced, the whole process has no changes compared with the traditional heterojunction cell, the manufacturing time period and teh process are simple, no special process is needed, and a significant advantage also exists in terms of cost.

Description

technical field [0001] The invention belongs to the field of solar cells, and relates to a preparation method of a-Si / c-Si heterojunction solar cells. Background technique [0002] In recent years, the environmental problems of energy shortage and global warming have become increasingly serious, and human beings have an unprecedented demand for clean and renewable energy. Photovoltaic solar energy is an important renewable energy source, which has many advantages such as extensive energy sources, less geographical restrictions, and safety and reliability. [0003] Since the application of the first silicon solar cell in 1954, solar cells have gone through the development of the first generation of monocrystalline silicon solar cells and the second generation of thin film cells, but the current high cost of power generation still severely limits the further widespread application of solar cells, so Reducing the cost of solar cells has become the focus of current research. J...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0747H01L31/20
CPCY02E10/50H01L31/0747H01L31/202
Inventor 严辉张悦张永哲宋雪梅张林睿郁操杨苗张津燕徐希翔
Owner BEIJING UNIV OF TECH