Silicon-based lithium niobate thin film optical modulator based on Mach-Zehnder interference

Abstract

The invention provides a silicon-based lithium niobate thin film optical modulator based on Mach-Zehnder interference. The silicon-based lithium niobate thin film optical modulator includes a traveling wave electrode, a lithium niobate waveguide layer, a lower cladding layer, a ground electrode, and a substrate, the upper surface of the substrate is covered by the ground electrode, the upper surface of the ground electrode is covered by the lower cladding layer, the upper surface of the lower cladding layer is covered by the lithium niobate waveguide layer, the upper surface of the lithium niobate waveguide layer is covered by the traveling wave electrode, the lithium niobate waveguide layer includes a lithium niobate crystal and a titanium diffusion strip waveguide, and the lithium niobate crystal is arranged in the middle of the lower surface of the titanium diffusion strip waveguide. By means of the lithium niobate waveguide layer, the dimension of the modulator is reduced while the low-power driving is realized, the stability of the device is improved, and the silicon-based lithium niobate thin film optical modulator has the advantages of simple manufacturing technology, small device size, and good stability. The popularization and application are facilitated.

Description

technical field [0001] The invention belongs to the field of optics, in particular to an optical modulator. Background technique [0002] The Mach-Zehnder modulator is a waveguide dielectric optical modulation device based on the Mach-Zehnder interference principle. The MZ consists of two Y splitters at both ends and two single waveguide modulators in the middle. [0003] Modulators are key devices for generating optical signals. In the transmitter of TDM and WDM systems, the optical carrier signal from the continuous wave (CW) laser enters the modulator, and the high-speed data stream is superimposed on the optical carrier signal in the form of driving voltage to complete the modulation. [0004] Driven by exponential growth in network capacity and global integration, optical communication systems are rapidly developing towards high-capacity, high-speed, long-distance transmission. The performance and efficiency of the modulator primarily determine whether the optical com...

AI Technical Summary

Problems solved by technology

[0007] In order to solve the above-mentioned technical problems, the present invention provides a silicon-based lithium niobate thin-film optical modulator based on Mach-Zehnder interference, so as to solve the problem of low-power drive and the oversize and poor stability of the modulator in the prior art. The production process is complicated, including traveling wave electrodes, lithium niobate waveguide layers, lower cladding layers, ground electrodes and substrates, the upper surface of the substrate covers the ground electrodes; the upper surface of the ground electrodes covers the The lower cladding layer; the upper surface of the lower cladding layer covers the lithium niobate lithium niobate waveguide layer; the upper surface of the lithium niobate waveguide layer covers the traveling wave electrode; the niobate The lithium waveguide layer includes a lithium niobate crystal and a titanium diffusion strip waveguide; the lithium niobate crystal is arranged in the middle of the lower surface of the titanium diffusion strip waveguide

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