Production method for oxide semiconductor thin film transistor
A technology for oxide semiconductors and thin film transistors, used in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., to solve problems such as loss of semiconductor characteristics, unprotected active layers, and failure of switching characteristics of oxide semiconductor thin film transistors , to achieve the effect of reducing contact resistance, maintaining switching characteristics, and high electron mobility
Inactive Publication Date: 2016-10-26
SHENZHEN CHINA STAR OPTOELECTRONICS TECH CO LTD
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[0005] However, oxide semiconductor thin film transistors require lower contact resistance than amorphous silicon thin film transistors. In the absence of low resistance contact conditions, the high mobility of oxide semiconductors will be masked by high contact resistance. In addition, when oxide thin film transistors are used When the back channel etch (BCE) structure is used, the active layer at the channel position is not protected, and it is easy to lose the semiconductor characteristics during the manufacturing process, which in turn leads to the failure of the switching characteristics of the oxide semiconductor thin film transistor
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[0041] In order to further illustrate the technical means adopted by the present invention and its effects, the following describes in detail in conjunction with preferred embodiments of the present invention and accompanying drawings.
[0042] see Figure 11 , the invention provides a method for manufacturing an oxide semiconductor thin film transistor, comprising the following steps:
[0043] Step 1. Please refer to figure 1 , providing a substrate 1 on which a first metal layer 2' is formed.
[0044] Specifically, the substrate 1 is a transparent substrate, preferably a glass substrate, and the first metal layer 2' may be a single-layer metal structure, such as being composed of only one layer of molybdenum (Mo), or a multi-layer metal laminated structure, For example, two layers of molybdenum sandwich a layer of aluminum (Al), or a layer of molybdenum is superimposed on a layer of titanium (Ti). The thickness of the first metal layer 2' is 100nm-400nm. In the step 1, t...
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The invention provides a production method for an oxide semiconductor thin film transistor. According to the method, plasma doping treatment is carried out on an active layer, a part of the active layer, which is far away from one side of a gate insulation layer, is changed into a doping layer and is in contact with a source electrode and a drain electrode through the doping layer, so that the contact resistance of the oxide semiconductor thin film transistor is reduced, the characteristic of high electronic mobility of the oxide semiconductor thin film transistor is fully exerted, and meanwhile, after formation of the source electrode and the drain electrode, plasma reduction treatment is carried out on the exposed doping layer between the source electrode and the drain electrode, the part of doping layer is reduced to an oxide semiconductor and the semiconductor characteristic thereof is recovered, so that the switching characteristic of the oxide semiconductor thin film transistor is kept.
Description
technical field [0001] The invention relates to the field of display technology, in particular to a method for manufacturing an oxide semiconductor thin film transistor. Background technique [0002] A liquid crystal display (LCD, Liquid Crystal Display) has many advantages such as a thin body, power saving, and no radiation, and has been widely used. Most of the liquid crystal display devices currently on the market are backlight liquid crystal display devices, which include a liquid crystal display panel and a backlight module. The working principle of the liquid crystal display panel is to place liquid crystal molecules between two parallel glass substrates, and control the liquid crystal molecules to change direction through whether the glass substrates are energized or not, and refract the light from the backlight module to produce a picture. [0003] Usually, the liquid crystal display panel consists of a color filter (CF, Color Filter) substrate, a thin film transist...
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IPC IPC(8): H01L21/336
CPCH01L29/66742
Inventor 林钦遵谢应涛
Owner SHENZHEN CHINA STAR OPTOELECTRONICS TECH CO LTD