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Organic electronic compositions and device thereof

A technology for organic electronics and devices, applied in the field of organic electronic compositions and their devices, can solve the problems of performance and stability reduction, improvement, doping of charged substances, etc.

Active Publication Date: 2016-11-02
弗莱克英纳宝技术有限公司 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Such species will become incorporated into the cross-linked dielectric, causing unwanted effects such as an increase in k value, or the introduction of charged species can dope the OSC layer, resulting in reduced performance and stability

Method used

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  • Organic electronic compositions and device thereof
  • Organic electronic compositions and device thereof
  • Organic electronic compositions and device thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0146] The polycyclic olefinic polymers described herein are prepared as follows.

[0147] (Poly(1-but-3-enyl norbornene-co-1-but-2-enyl norbornene) with different ratios of isomerized butenyl groups were prepared.

[0148]

[0149] Polymer 1: tetrakis (pentafluorophenyl) lithium etherate complex LiFABA ([Li (Et 2 O) 2.5 ][B(C 6 f 5 ) 4 ], 47.4 mg, 0.054 mmol) and butenyl norbornene ("butenyl NB", 20 g, 136 mmol) in toluene (total solution volume 50 mL) was heated to 80 °C. A solution of [(trinaphthylphosphine)(trifluoroacetic acid)(allyl)palladium] (9.6 mg, 0.014 mmol, 0.01 M) in toluene was then added to the reaction mixture. The reaction mixture was stirred at 80°C for 18 hours. The reaction mixture was allowed to cool to room temperature. The reaction mixture was diluted to a total volume of 100 mL with THF and poured into MeOH ( 10-fold excess). The precipitated polymer was filtered and then dried in a vacuum oven at 50 °C overnight to yield a white powder. ...

Embodiment 2

[0179] To evaluate the OTFT performance of the material, OSC polymer from Merck was used They are used to construct standard top-gate, bottom-contact OFET devices.

[0180] Dielectric Polymer 1 and Polymer 2 were coated with decane at a concentration of 15% to provide orthogonality to the underlying OSC layer. For the tests described below, the dielectric was used without the addition of a crosslinker and spin-coated at 900 rpm for 30 seconds to produce a film with a thickness of 0.5 μm. The film was baked at 100°C for 2 minutes.

[0181] Polymer C1 (pHexylNB) was coated from decane at a concentration of 12.5% ​​and spin-coated at 500 rpm for 10 seconds, then 1800 rpm for 30 seconds to produce a 0.8 μm film. The film was baked at 100°C for 2 minutes.

[0182] Polymer C2 [p(BuNB / DPCD)] was coated from decane at a concentration of 15% and spin-coated at 3000 rpm for 30 seconds to produce a 0.65 μm film. No crosslinking agent added. The film was baked at 100°C for 2 minutes...

Embodiment 3

[0191] Make OTFT devices including BAC-E and use about 3J / cm 2 365nm UV dose for crosslinking. Due to the k-dependence of this measurement, it is expected to see a decrease in hole mobility in the device when BAC-E is added.

[0192] Dielectric Polymer 1 and Polymer 2 consisted of a mixture of decane and cyclopentanone (2:1) at a concentration of 20% which provided orthogonality to the underlying OSC layer and solubility for both the polymer and BAC-E. coated. Dielectrics with 10% BAC-E crosslinker added were used and spin-coated at 3000 rpm for 30 s to produce films with a thickness of 1.1 μm. The film was irradiated and baked at 100°C for 2 minutes.

[0193] Polymer C1 (pHexylNB) was coated from decane at a concentration of 12.5% ​​and spin-coated at 500 rpm for 10 seconds, then 1800 rpm for 30 seconds to produce a 0.8 μm film. The film was baked at 100°C for 2 minutes.

[0194] Polymer C2 [p(BuNB / DPCD)] was coated with a mixture of decane and ethyl benzoate (80:20) at ...

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Abstract

The present invention relates to organic electronic devices, and more specifically to organic field effect transistors, comprising a dielectric layer that comprises a polycycloolefinic polymer with an olefinic side chain.

Description

technical field [0001] The present invention relates to organic electronic compositions and devices thereof, in particular to organic dielectric compositions, and organic field-effect transistors comprising dielectric layers comprising polycyclic olefinic polymers having olefinic side chain. Background technique [0002] In recent years, there has been increasing interest in organic electronic (OE) devices, such as organic field effect transistors (OFETs) for backplanes of display devices or logic capable circuits, and organic photovoltaic (OPV) devices. A conventional OFET has a gate electrode, a gate insulating layer made of a dielectric material (also known as "dielectric" or "gate dielectric"), a source electrode and a drain electrode, a semiconductor made of an organic semiconductor (OSC) material layer, and typically a passivation layer on top of the above layers to provide protection from environmental influences or damage from subsequent device fabrication steps. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/05C08F232/00H10K99/00
CPCC08F232/00Y02E10/549H10K10/471C08F6/12C08F2/50H10K85/10H10K10/464H10K10/466H10K85/151C08F232/08
Inventor I·阿福尼娜T·库尔
Owner 弗莱克英纳宝技术有限公司