Unlock instant, AI-driven research and patent intelligence for your innovation.

A kind of method for preparing graphene thin film on insulating substrate

A technology of graphene film and insulating substrate, which is applied in the field of preparing graphene film, and can solve problems such as difficult large-scale film production

Inactive Publication Date: 2019-04-26
EAST CHINA UNIV OF SCI & TECH
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

A method for preparing graphene on the substrate surface by electrochemical deposition was reported in the previous patent [Luo Shenglian, Liu Chengbin, Tang Yanhong, Liu Ronghua, Teng Yarong, Zhang Gan, Zhang Xilin. A method for preparing graphene film. CN102051651A]; The method of preparing graphene by CVD [Ren Wencai, Gao Libo, Ma Laipeng, etc. Preparation of graphene by chemical vapor deposition [J]. New Carbon Materials, 2011, 26(1): 71-80], however, these two methods Both are only suitable for conductive substrates, especially CVD is only suitable for a small number of metal substrates such as nickel and copper
In another patent, a graphene film was obtained by suction filtration [Zeng You, Zheng Yaxuan, Wang Han, Yingzhe, Pei Songfeng, Ren Wencai, Cheng Huiming. A preparation method of graphene heating film. CN103607795A], but This method can only obtain thicker films, and it is difficult to achieve large-area film formation

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of method for preparing graphene thin film on insulating substrate
  • A kind of method for preparing graphene thin film on insulating substrate
  • A kind of method for preparing graphene thin film on insulating substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] Weigh 20 mg of graphene oxide (GO), add it to deionized water, sonicate for 30 minutes, add 1 mmol acetic acid to the solution, and then add deionized water to make a 50 mL aqueous solution. The solution was stirred for 10 minutes and then sonicated for 30 minutes. Then transfer the above mixed solution to a 100 mL hydrothermal kettle, and put the substrate (keep it vertically) immersed in the dispersion, hydrothermally react at 200 °C for 24 hours, and take out the product when the temperature drops to room temperature , After washing and drying with deionized water, a graphene film is obtained. The result is figure 1 Shown.

Embodiment 2

[0020] Weigh 20 mg of graphene oxide (GO), add it to deionized water, sonicate for 30 minutes, add 1 mmol acetic acid to the solution, and then add deionized water to make a 50 mL aqueous solution. The solution was stirred for 10 minutes and then sonicated for 30 minutes. Then transfer the above mixed solution to a 100 mL hydrothermal kettle, and put the substrate (keep it vertically) immersed in the dispersion, and react hydrothermally at 180 °C for 30 hours. When the temperature drops to room temperature, take out the product After cleaning with deionized water, it is placed at room temperature to dry naturally to obtain a ceramic sheet substrate for growing graphene film.

Embodiment 3

[0022] Weigh 20 mg of graphene oxide (GO), add it to deionized water, sonicate for 30 minutes, add 1 mmol of citric acid to the solution, and then add deionized water to make a 50 mL aqueous solution. The solution was stirred for 10 minutes and then sonicated for 30 minutes. Then transfer the above mixed solution to a 100 mL hydrothermal kettle, and put the substrate (keep it vertically) immersed in the dispersion, hydrothermally react at 200 °C for 24 hours, and take out the product when the temperature drops to room temperature , After washing and drying with deionized water, a graphene film is obtained. The result is figure 2 Shown.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a one-step method for preparing a graphene film on an insulation matrix. The uniform graphene film can be obtained on the surface of the matrix after hydrothermal treatment of the insulation matrix in a graphene oxide solution containing weak acid. The preparation method does not need expensive instruments and equipment, and is simple and easily controllable in process, low in cost and convenient to promote. The insulation matrix loaded with the graphene film can be used as an electrical or electrochemical device and has extensive potential application value.

Description

Technical field [0001] The invention relates to a method for preparing a graphene film on an insulating substrate, in particular to the direct hydrothermal growth of a graphene film on an insulating substrate, and mainly relates to the technical fields of electrical or electrochemical devices, surface modification and modification. Background technique [0002] Graphene is a new material with a single-layer sheet structure composed of carbon atoms. It is composed of carbon atoms and sp2 hybrid orbitals to form a hexagonal honeycomb lattice flat film. It is a two-layer thin film with a thickness of only one carbon atom. Dimensional materials. Graphene has a series of properties such as excellent mechanical properties, electrical conductivity, and very high specific surface area. [0003] At present, graphene materials have received extensive attention and research, and have become a hot spot. Among them, graphene films are particularly favored because they are beneficial to realizi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/184
Inventor 赵崇军王圣琪邵肖肖马越赵莉钱秀珍
Owner EAST CHINA UNIV OF SCI & TECH