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Graphite material with SiC coating and preparation method thereof

A graphite material and coating technology, applied in the field of graphite material with SiC coating and its preparation, can solve the problems of low bonding strength between SiC coating and graphite material, low bonding strength, limited activity, etc., and achieve high bonding Strength, high bonding strength, effect of improving bonding strength

Inactive Publication Date: 2016-11-09
NAT UNIV OF DEFENSE TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Traditional preparation methods usually use chemical vapor deposition (CVD) or brushing to directly deposit a layer of SiC coating on the graphite surface, but SiC coatings and graphite materials have some differences in physical and chemical properties such as inconsistent expansion coefficients, so The bonding strength between the coating and the graphite material is not high, and it is easy to fall off; some use a two-step deposition method, first deposit a layer of solid Si, use the Si and graphite surface to react the primary layer of SiC, and then deposit the secondary SiC coating layer, but the reaction activity between solid Si and graphite in this method is limited, and the reaction is only limited to the surface of graphite, and SiC particles cannot fully penetrate into the interior of graphite, resulting in a low bonding strength between SiC coating and graphite material.

Method used

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  • Graphite material with SiC coating and preparation method thereof
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  • Graphite material with SiC coating and preparation method thereof

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Embodiment 1

[0033] A graphite material with a SiC coating of the present invention, comprising a graphite substrate and a SiC coating, the SiC coating comprising a primary SiC layer and a secondary SiC layer, the primary SiC layer penetrates into the interior of the graphite substrate relative to the surface of the graphite substrate, and is in a gaseous state Silicon reacts with the graphite matrix in situ to form a secondary SiC layer on top of the primary SiC layer.

[0034] In this embodiment, the primary SiC layer has a composition gradient from the surface of the graphite substrate to the interior of the graphite substrate, with a depth of 2.0 mm.

[0035] In this embodiment, the SiC in the primary SiC layer and the secondary SiC layer are both polycrystalline β-SiC.

[0036] In this embodiment, the thickness of the secondary SiC layer is 100 μm.

[0037] The preparation method of the graphite material with SiC coating of the present embodiment, such as figure 1 shown, including t...

Embodiment 2

[0045] A graphite material with a SiC coating of the present invention, comprising a graphite substrate and a SiC coating, the SiC coating comprising a primary SiC layer and a secondary SiC layer, the primary SiC layer penetrates into the interior of the graphite substrate relative to the surface of the graphite substrate, and is in a gaseous state Silicon reacts with the graphite matrix in situ to form a secondary SiC layer on top of the primary SiC layer.

[0046] In this embodiment, the primary SiC layer has a composition gradient from the surface of the graphite substrate to the interior of the graphite substrate, with a depth of 3.0 mm.

[0047] In this embodiment, the SiC in the primary SiC layer and the secondary SiC layer are both polycrystalline β-SiC.

[0048] In this embodiment, the thickness of the secondary SiC layer is 50 μm.

[0049] The preparation method of the graphite material with SiC coating of the present embodiment, such as figure 1 shown, including th...

Embodiment 3

[0054] A graphite material with a SiC coating of the present invention, comprising a graphite substrate and a SiC coating, the SiC coating comprising a primary SiC layer and a secondary SiC layer, the primary SiC layer penetrates into the interior of the graphite substrate relative to the surface of the graphite substrate, and is in a gaseous state Silicon reacts with the graphite matrix in situ to form a secondary SiC layer on top of the primary SiC layer.

[0055] In this embodiment, the primary SiC layer has a composition gradient from the surface of the graphite substrate to the interior of the graphite substrate, with a depth of 2.5 mm.

[0056] In this embodiment, the SiC in the primary SiC layer and the secondary SiC layer are both polycrystalline β-SiC.

[0057] In this embodiment, the thickness of the secondary SiC layer is 75 μm.

[0058] The preparation method of the graphite material with SiC coating of the present embodiment, such as figure 1 shown, including th...

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Abstract

The invention discloses a graphite material with a SiC coating and a preparation method thereof. The graphite material comprises a graphite base and a SiC coating. The SiC coating comprises a primary SiC layer and a secondary SiC layer. The primary SiC layer permeates into the graphite base from the surface of the graphite base and is formed by an in-situ reaction of gaseous silicon and the graphite base. The secondary SiC layer is located on the primary SiC layer. The preparation method comprises 1, carrying out vapor silicon infiltration sintering on a graphite material to obtain a graphite material with the primary SiC layer and 2, carrying out vapor deposition of the secondary SiC layer. The graphite material with the SiC coating has the advantages that the SiC coating has good cohesiveness to the graphite material, has no thermal expansion coefficient mismatch, is compact and has high oxidation resistance. The preparation method effectively solves the problem of thermal expansion coefficient mismatch in preparation of the SiC coating on the surface of the graphite material directly through a CVD technology, and guarantees high bonding strength between the coating and graphite.

Description

technical field [0001] The invention belongs to the field of graphite materials, in particular to a graphite material with SiC coating and a preparation method thereof. Background technique [0002] Graphite materials have the advantage of high temperature resistance, and are widely used in many high temperature structural fields. However, since graphite materials will oxidize and corrode in high temperature and oxidizing environments, which will cause gradual damage to components, so graphite materials are usually coated when they are used in some specific corrosive fields. For example, when growing single-crystal GAN ​​materials epitaxially, graphite trays are needed. Because graphite materials will corrode and drop powder under high-temperature and corrosive gas environments, powder impurities will be introduced into single-crystal materials to solve the problem of graphite trays. An effective technical approach to the corrosion problem is to apply an overall dense prote...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B41/50
CPCC04B41/50
Inventor 刘荣军曹英斌张长瑞王衍飞龙宪海李斌王思青贺鹏博
Owner NAT UNIV OF DEFENSE TECH
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