Treating method for fittings of silicon carbide epitaxial furnace

Abstract

The invention discloses a treating method for fittings of a silicon carbide epitaxial furnace. The method is used for treating silicon deposited on fittings in a silicon carbide chemical deposition epitaxial furnace and introduces hydrogen chloride gas into the silicon carbide epitaxial furnace at high temperature for reaction with silicon deposited on the fittings in the furnace so as to remove deposited silicon; so adverse influence on process by silicon contaminants on the fittings is reduced, consumption cost of the fittings is reduced, and each equipment saves 300 yuan per furnace on average.

Description

technical field [0001] The invention relates to silicon carbide epitaxy technology, in particular to a method for processing parts of a silicon carbide epitaxy furnace. Background technique [0002] As a third-generation semiconductor, silicon carbide has excellent characteristics such as large band gap, excellent stability, high thermal conductivity, high critical breakdown field strength, and high saturation electron drift velocity. Ideal semiconductor materials for radiative power electronics. Compared with traditional silicon devices, silicon carbide devices can work normally under the electric field strength 10 times that of silicon devices. Using silicon carbide instead of silicon materials as structural layers can greatly improve the reliability of power electronic devices and MEMS devices. Especially in the field of harsh environment detection, the possibility of device failure can be minimized. Therefore, silicon carbide has great application potential. The silic...

AI Technical Summary

Problems solved by technology

When silicon adhesion reaches a certain level, it will have a major impact on the process, but there is no effective way to remove it. After a period of use, it can only be discarded and replaced, which increases the cost of production.