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Charge injection, transmission and recombination method of quantum dot light-emitting diodes

A technology of quantum dot light emission and charge injection, which is applied in the direction of circuits, electrical components, and electric solid-state devices, can solve the problems of limited lifting capacity and lower performance of QD-LED devices, and achieve the effect of improving the injection balance and reducing the exploration process

Inactive Publication Date: 2016-11-09
NANCHANG HANGKONG UNIVERSITY
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Problems solved by technology

However, studies have found that the hole injection ability can be improved within a certain range by doping the hole transport layer, but due to the limitation of the HOMO energy level, the improvement ability is very limited; and, compared with organic substances, the use of metal oxides as The hole-transporting layer will degrade the performance of QD-LED devices instead

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  • Charge injection, transmission and recombination method of quantum dot light-emitting diodes
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Embodiment Construction

[0026] The embodiments of the present invention are described in further detail below, but the embodiments are not intended to limit the present invention, and any similar structures and similar changes of the present invention should be included in the protection scope of the present invention.

[0027] Main content of the present invention comprises following three aspects:

[0028] (1) Research on charge injection and flow mechanism. Study the injection and flow mechanism of charges in QD-LEDs from the aspects of injection limitation and space charge limitation, explore the testing methods of electron / hole injection current, unrecombined and leaked electron / hole current, and prove the charge injection density And the relationship between mobility and parameters such as material properties, transport layer thickness, temperature and electric field strength.

[0029] (2) Design and regulation of high charge balance QD-LED structure. The overall structure of QD-LED is optimi...

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Abstract

The invention relates to a charge injection, transmission and recombination method of quantum dot light-emitting diodes. According to the charge injection, transmission and compound method of the quantum dot light-emitting diodes, the electron / hole injection, transmission and recombination processes of the QD-LEDs are studied theoretically, and experimental investigations for verifying a series of QD-LED chips of different structures are used in combination; electrical performance tests, electroluminescence spectra and steady-state / transient fluorescence spectra are utilized; a quantitative calculation method is adopted to carry out theoretical modeling for the electron / hole injection, transmission and recombination of the QD-LEDs; a charge balance mechanism is interpreted; key factors that affect the overall efficiency and other performance of the QD-LEDs are explored; a reasonable and effective improvement scheme is put forward; and finally, high-performance QD-LEDs having long service lives can be obtained. With the method of the invention adopted, a theoretical basis and a research means are provided for the improvement of charge balance and overall efficiency of the QD-LEDs. The method is of great significance for developing a novel and efficient QD-LED display device.

Description

technical field [0001] The invention relates to the preparation of a luminescent material, in particular to the research of a quantum dot luminescent material on electron / hole injection, transport and recombination processes in QD-LED components. Background technique [0002] Quantum dot materials (colloidal quantum dots, QDs) refer to semiconductors with excellent characteristics such as high luminous quantum efficiency, narrow emission line width, and emission frequency that changes with the size of quantum dots. Therefore, quantum dot light-emitting diodes have a wavelength of 30nm. In principle, its luminous wavelength can be continuously adjusted from visible light to infrared, and it has a series of advantages such as high color purity. Therefore, since the prototype of Quantum dot integrated LED (QD-LED) appeared in 1994, QD-LED has aroused great interest and has become a research hotspot in the field of display after high-power LED and OLED. However, the luminous ef...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/56
CPCH10K71/00H10K71/70
Inventor 陈文勇张芹杨颖顾小兵钟小怡
Owner NANCHANG HANGKONG UNIVERSITY
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