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Thin film transistor, manufacturing method thereof, array substrate and display panel

A technology of thin film transistor and substrate substrate, which is applied in the fields of array substrate, thin film transistor and its manufacturing method, and display panel, can solve the problems of unsatisfactory adjustment effect and small on-current, so as to increase the number and improve the on-current. , the effect of increasing the light intensity

Inactive Publication Date: 2016-11-16
BOE TECH GRP CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the conduction current when the thin film transistor is turned on in the prior art is relatively small. In the prior art, the conduction current when the thin film transistor is turned on is generally adjusted by changing the width-to-length ratio of the thin film transistor or the driving voltage, but the adjustment effect is not ideal.

Method used

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  • Thin film transistor, manufacturing method thereof, array substrate and display panel
  • Thin film transistor, manufacturing method thereof, array substrate and display panel
  • Thin film transistor, manufacturing method thereof, array substrate and display panel

Examples

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Embodiment 1

[0041] As shown in FIG. 3( a ), the thin film transistor provided by a specific embodiment of the present invention includes: a base substrate 30 , a gate electrode 21 provided with a plurality of hollow areas on the base substrate 30 , and a transparent conductive material filled in the hollow areas 211 , the electrochromic layer 31 on the transparent conductor 211 , the semiconductor active layer 32 on the electrochromic layer 31 , the source electrode 14 and the drain electrode 15 . The specific arrangements of the semiconductor active layer 32 , the source electrode 14 and the drain electrode 15 of the thin film transistor in the specific embodiment of the present invention are similar to those in the prior art, and are not repeated here.

[0042] The base substrate 30 in the specific embodiment of the present invention is a glass substrate. Of course, in the actual production process, the base substrate 30 may also be other types of substrates such as plastic substrates. ...

Embodiment 2

[0050] As shown in FIG. 3( b ), the thin film transistor provided by the specific embodiment of the present invention includes: a base substrate 30 , a gate electrode 21 provided with a plurality of hollow areas on the base substrate 30 , an electrochromic electrode filled in the hollow areas layer 31, insulating layer 34 on the electrochromic layer 31, semiconductor active layer 32 on the insulating layer 34, source electrode 14 and drain electrode 15, the electrochromic layer 31 in the specific embodiment of the present invention adopts conductivity The insulating layer 34 adopts the commonly used insulating material in the prior art, such as: the insulating layer 34 adopts a single-layer film of silicon oxide or silicon nitride, or a composite film of silicon oxide and silicon nitride. The specific embodiment does not limit the specific material of the insulating layer 34 .

[0051] Specifically, when the thin film transistor in the specific embodiment of the present invent...

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Abstract

The present invention discloses a thin film transistor, a manufacturing method thereof, an array substrate and a display panel which are used for improve a conduction current when the thin film transistor is turned on. The thin film transistor comprises a substrate, a gate electrode located on the substrate and equipped with a plurality of hollow areas and an electrochromism layer located on the gate electrode, the hollow areas are at least covered by the electrochromism, and the electrochromism is used to increase the transmittance of the light rays when the signal received by the gate electrode is a turn-on signal.

Description

technical field [0001] The present invention relates to the field of display technology, and in particular, to a thin film transistor and a manufacturing method thereof, an array substrate and a display panel. Background technique [0002] Thin Film Transistor (TFT) is mainly used to control and drive the sub-pixels of Liquid Crystal Display (LCD) and Organic Light-Emitting Diode (OLED) displays. One of the electronic devices. [0003] Prior art thin film transistor designs such as figure 1 As shown, the thin film transistor includes a gate electrode 13 located on a base substrate, a semiconductor active layer (not shown in the figure) located on the gate electrode 13, a source electrode 14 and a drain electrode 15 located on the semiconductor active layer. Also shown is the gate line 11 connected to the gate electrode 13, and the data line 12 connected to the source electrode 14. [0004] An ideal TFT device needs to have a large on-state current (Ion) when it is turned ...

Claims

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Application Information

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IPC IPC(8): H01L29/786
Inventor 董殿正张斌张强解宇张衎王光兴陈鹏名王俊伟
Owner BOE TECH GRP CO LTD
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