The invention provides a BCD device and a manufacturing method thereof. The cell structure includes a substrate, an epitaxial layer, a P isolation, a P well, a P-type heavily doped region, an N-type heavily doped region, a DMOS source electrode, a first P Well contact electrodes, DMOS gate electrodes, PMOS gate electrodes, NMOS gate electrodes, source electrodes, drain electrodes, BJT base electrodes, BJT emitter electrodes, BJT collector electrodes; the present invention can reduce the mask of the Nwell region in the BCD process version, which is conducive to reducing the cost of mass-produced products and improving the competitiveness of products; the concentration of the epitaxial layer used to act as the Nwell region is increased, so that the number of carriers when the DMOS device is on increases, and the specific on-resistance of the DMOS is further reduced. Reduce device loss and improve device performance.