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A kind of thin film transistor and its manufacturing method, array substrate, display panel

A technology of thin film transistors and array substrates, applied in the direction of transistors, etc., can solve the problems of small conduction current and unsatisfactory adjustment effect, and achieve the effects of increasing the number, increasing light transmittance, and increasing light intensity

Inactive Publication Date: 2019-09-17
BOE TECH GRP CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the conduction current when the thin film transistor is turned on in the prior art is relatively small. In the prior art, the conduction current when the thin film transistor is turned on is generally adjusted by changing the width-to-length ratio of the thin film transistor or the driving voltage, but the adjustment effect is not ideal.

Method used

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  • A kind of thin film transistor and its manufacturing method, array substrate, display panel
  • A kind of thin film transistor and its manufacturing method, array substrate, display panel
  • A kind of thin film transistor and its manufacturing method, array substrate, display panel

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Embodiment 1

[0041] As shown in Figure 3(a), the thin film transistor provided by the specific embodiment of the present invention includes: a base substrate 30, a gate electrode 21 with several hollowed-out areas on the base substrate 30, a transparent conductive substance filled in the hollowed-out areas 211 , the electrochromic layer 31 located on the transparent conductive object 211 , the semiconductor active layer 32 located on the electrochromic layer 31 , the source electrode 14 and the drain electrode 15 . The specific arrangement of the semiconductor active layer 32 , the source 14 and the drain 15 of the thin film transistor in the specific embodiment of the present invention is similar to that of the prior art, and will not be repeated here.

[0042] The base substrate 30 in the specific embodiment of the present invention is a glass substrate. Of course, in the actual production process, the base substrate 30 can also be other types of substrates such as plastic substrates. The...

Embodiment 2

[0050] As shown in Figure 3(b), the thin film transistor provided by the specific embodiment of the present invention includes: a base substrate 30, a gate electrode 21 with several hollowed-out areas located on the base substrate 30, and an electrochromic electrode 21 filled in the hollowed-out areas. Layer 31, an insulating layer 34 positioned on the electrochromic layer 31, a semiconductor active layer 32 positioned on the insulating layer 34, a source electrode 14 and a drain electrode 15, the electrochromic layer 31 in a specific embodiment of the present invention adopts a conductive The electrochromic material, the insulating layer 34 adopts the insulating material commonly used in the prior art, such as: the insulating layer 34 adopts a single-layer film of silicon oxide or silicon nitride, and can also adopt a composite film of silicon oxide and silicon nitride. The specific embodiment does not limit the specific material of the insulating layer 34 .

[0051] Specific...

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Abstract

The present invention discloses a thin film transistor, a manufacturing method thereof, an array substrate and a display panel which are used for improve a conduction current when the thin film transistor is turned on. The thin film transistor comprises a substrate, a gate electrode located on the substrate and equipped with a plurality of hollow areas and an electrochromism layer located on the gate electrode, the hollow areas are at least covered by the electrochromism, and the electrochromism is used to increase the transmittance of the light rays when the signal received by the gate electrode is a turn-on signal.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a thin film transistor and a manufacturing method thereof, an array substrate, and a display panel. Background technique [0002] Thin Film Transistor (TFT) is mainly used to control and drive sub-pixels of Liquid Crystal Display (LCD) and Organic Light-Emitting Diode (OLED) displays, and is the most important in the field of flat panel display. One of the electronic devices. [0003] State-of-the-art thin film transistor designs such as figure 1 As shown, the thin film transistor includes a gate 13 on the substrate, a semiconductor active layer (not shown) on the gate 13, a source 14 and a drain 15 on the semiconductor active layer, the figure The gate line 11 connected to the gate 13 and the data line 12 connected to the source 14 are also shown in FIG. [0004] An ideal TFT device needs to have a large on-current (Ion) when it is turned on, and a small off-current (Ioff) w...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/786
Inventor 董殿正张斌张强解宇张衎王光兴陈鹏名王俊伟
Owner BOE TECH GRP CO LTD
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