Detection device and method for thin-film transistor array substrate

Abstract

The invention provides a detection device of a thin-film transistor array substrate and used for conducting the defect detecting on the thin-film transistor array substrate. The detection device comprises a carrying table base and a heating device arranged on the carrying table base, wherein the heating device is used for heating the thin-film transistor array substrate placed on the carrying table base before the defect detecting is conducted. The invention further provides a detection method for the thin-film transistor array substrate. By utilization of the thermo-sensitive properties, the thin-film transistor array substrate to be detected is heated and warmed through the arrangement of the heating device, the detection method can increase the number of the current carrier in the amorphous silicon residue of the thin-film transistor array substrate, increases the electrical activity of the amorphous silicon residue, enhances the influence of the amorphous silicon residue on the pixel voltage during detection, is beneficial for the pixel defect detection of the amorphous silicon residue, and avoids the leak detection of the defected products.

Description

technical field [0001] The invention relates to the technical field of liquid crystal display, in particular to a detection device and a detection method of a thin film transistor array substrate. Background technique [0002] In the manufacturing process of the liquid crystal panel, it is first necessary to use a glass substrate as a substrate, and fabricate a thin film transistor (Thin Film Transistor, TFT) array on the glass substrate, so as to fabricate a thin film transistor array substrate. When making a TFT array, it is necessary to use multiple photomask processes to separately fabricate each layer structure of the TFT, such as the gate layer, gate insulating layer, semiconductor layer, source and drain layers, passivation protection layer, etc., each photomask process For example, it includes process steps such as film deposition, photoresist application, exposure and development, etching, and photoresist stripping. [0003] figure 1 It is a plan view of a partial...

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Problems solved by technology

Because the amorphous silicon residue 109 is a semiconductor, there are not too many carriers (a lot less than the free electrons in the conductor), the amorphous silicon residue 109 has little change in the voltage on the data line 102, and the amorphous silicon residue 109 cannot be connected with the pixel. The electrode 25 acts directly, and can only change the pixel voltage through the capacitive coupling effect, which has little influence on the pixel voltage. Therefore, it is difficult to detect the amorphous silicon residue 109 during the above detection process, which may easily lead to leakage of defective products. check

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