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1064nm enhanced Si-PIN photoelectric detector and manufacturing method thereof

A technology for photodetectors and manufacturing methods, which is applied in the field of photodetectors, can solve the problems of low responsivity at 1064nm wavelength, etc., and achieve the effects of easy product production, easy integration, and small surface damage

Inactive Publication Date: 2016-11-16
THE 44TH INST OF CHINA ELECTRONICS TECH GROUP CORP
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Problems solved by technology

[0006] After adopting the above scheme, the black silicon layer is formed on the back of the Si-PIN photodetector, which improves the absorption rate of visible light and near-infrared light, and solves the problem of low responsivity of traditional Si photodetectors to 1064nm wavelength.

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  • 1064nm enhanced Si-PIN photoelectric detector and manufacturing method thereof

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Embodiment Construction

[0027] A 1064nm enhanced Si-PIN photodetector, the innovation of which is: the 1064nm enhanced Si-PIN photodetector consists of an N-type substrate layer 1, a P+ region 2, a black silicon layer 3, an N+ region 4, and a passivation film 5. Anti-reflection film 6, P electrode 7 and N electrode 8;

[0028] The P+ region 2 is formed on the front of the N-type substrate layer 1; the black silicon layer 3 is formed on the back of the N-type substrate layer 1; the anti-reflection film 6 covers the surface of the P+ region 2, and the anti-reflection film 6 is provided There is a P electrode hole, and the P electrode 7 is arranged in the P electrode hole and contacts the P+ region 2; the N+ region 4 covers the surface of the black silicon layer 3; the passivation film 5 covers the N+ region 4 surface, and the passivation film An N electrode hole is arranged on the 5, and an N electrode 8 is arranged in the N electrode hole and is in contact with the N+ region 4; the P+ region 2 forms a...

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Abstract

The invention discloses a 1064nm enhanced Si-PIN photoelectric detector, which comprises an N-type substrate layer, a P+ region, a black silicon layer, an N+ region, a passivating film, an antireflection film, a P electrode and an N electrode. The invention further discloses a manufacturing method of the photoelectric detector. The 1064nm enhanced Si-PIN photoelectric detector has the beneficial technical effects that the responsivity of the 1064nm enhanced Si-PIN photoelectric detector at a 1064nm wavelength reaches 0.6A / W and is doubled in comparison with that of a common device; and meanwhile, the 1064nm enhanced Si-PIN photoelectric detector has the characteristics of being low in cost, easy to integrate, high in response speed, high in responsivity, stable, reliable and the like, and has obvious advantages in the aspect of large-scale marketization.

Description

technical field [0001] The invention relates to a photodetector, in particular to a 1064nm enhanced Si-PIN photodetector and a manufacturing method thereof. Background technique [0002] Generally, silicon materials have a small absorption coefficient and a large penetration depth for long-wave photons. Even if the width of the depletion region of the silicon photodetector and the anti-reflection coating in the active region are optimized, its responsivity to 1064nm wavelength is less than 0.30A / W. [0003] The black silicon layer is a material layer obtained by microstructuring the silicon surface. Its absorption rate for visible light and near-infrared light can reach more than 90%, and its spectral absorption range covers the near-ultraviolet to near-infrared band ( 0.25μm~2.5μm). In the existing "black silicon" technology, generally a black silicon layer is formed on the photosensitive surface of the Si-PIN photodetector, and then a P+ region is formed on the black sili...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0352H01L31/105H01L31/18
CPCH01L31/035281H01L31/105H01L31/1804Y02P70/50
Inventor 黄烈云廖乃镘罗春林王艳
Owner THE 44TH INST OF CHINA ELECTRONICS TECH GROUP CORP
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